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Tantalum boride

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(Redirected from Tantalum diboride)
Structure of TaB2
Structure of TaB

Tantalum borides are compounds of tantalum and boron most remarkable for their extreme hardness.

Properties

The Vickers hardness of TaB and TaB2 films and crystals is ~30 GPa. Those materials are stable to oxidation below 700 °C and to acid corrosion.

TaB2 has the same hexagonal structure as most diborides (AlB2, MgB2, etc.). The mentioned borides have the following space groups: TaB (orthorhombic, Thallium(I) iodide-type, Cmcm), Ta5B6 (Cmmm), Ta3B4 (Immm), TaB2 (hexagonal, aluminum diboride-type, P6/mmm).

Preparation

Single crystals of TaB, Ta5B6, Ta3B4 or TaB2 (about 1 cm diameter, 6 cm length) can be produced by the floating zone method.

Tantalum boride films can be deposited from a gas mixture of TaCl5-BCl3-H2-Ar in the temperature range 540–800 °C. TaB2 (single-phase) is deposited at a source gas flow ratio (BCl3/TaCl5) of six and a temperature above 600 °C. TaB (single-phase) is deposited at BCl3/TaCl5 = 2–4 and T = 600–700 °C.

Nanocrystals of TaB2 were successfully synthesized by the reduction of Ta2O5 with NaBH4 using a molar ratio M:B of 1:4 at 700-900 °C for 30 min under argon flow.

Ta2O5 + 6.5 NaBH4 → 2 TaB2 + 4 Na(g,l) + 2.5 NaBO2+ 13 H2(g)

References

  1. ^ Motojima, Seiji; Kito, Kazuhito; Sugiyama, Kohzo (1982). "Low-temperature deposition of TaB and TaB2 by chemical vapor deposition". Journal of Nuclear Materials. 105 (2–3). Elsevier BV: 262–268. Bibcode:1982JNuM..105..262M. doi:10.1016/0022-3115(82)90383-x. ISSN 0022-3115.
  2. ^ Otani, S; Korsukova, M.M; Mitsuhashi, T (1998). "Floating zone growth and high-temperature hardness of NbB2 and TaB2 single crystals". Journal of Crystal Growth. 194 (3–4). Elsevier BV: 430–433. Bibcode:1998JCrGr.194..430O. doi:10.1016/s0022-0248(98)00691-5. ISSN 0022-0248.
  3. ^ Okada, Shigeru; Kudou, Kunio; Higashi, Iwarni; Lundström, Torsten (1993). "Single crystals of TaB, Ta5B6, Ta3B4 and TAB2, as obtained from high-temperature metal solutions, and their properties". Journal of Crystal Growth. 128 (1–4). Elsevier BV: 1120–1124. Bibcode:1993JCrGr.128.1120O. doi:10.1016/s0022-0248(07)80109-6. ISSN 0022-0248.
  4. Chen, Xing-Qiu; Fu, C. L.; Krčmar, M.; Painter, G. S. (2008-05-16). "Electronic and Structural Origin of Ultraincompressibility of5dTransition-Metal DiboridesMB2(M=W, Re, Os)". Physical Review Letters. 100 (19). American Physical Society (APS): 196403. Bibcode:2008PhRvL.100s6403C. doi:10.1103/physrevlett.100.196403. ISSN 0031-9007. PMID 18518467.
  5. Zoli, Luca; Galizia, Pietro; Silvestroni, Laura; Sciti, Diletta (23 January 2018). "Synthesis of group IV and V metal diboride nanocrystals via borothermal reduction with sodium borohydride". Journal of the American Ceramic Society. 101 (6): 2627–2637. doi:10.1111/jace.15401.
Tantalum compounds
Tantalum(II)
Tantalum(III)
Organotantalum(III)
  • Ta(SiOBu)3
  • Tantalum(IV)
    Tantalum(V)
    Organotantalum(V)
  • Ta2(OC2H5)10
  • TaC5H15
  • TaCl2(CH3)3
  • Ta(C2H6N)5
  • TaCp2H3
  • Borides Bx
    BxHy He
    Li Be B C N O F Ne
    Na MgB2 AlB2
    AlB12
    SiBx P S Cl Ar
    K CaB4
    CaB6
    ScB12 TiB2 V CrB Mn FeB4
    FexBy
    CoxBy Ni3B
    Ni2B
    Cu Zn Ga Ge As Se Br Kr
    Rb SrB6 YBx ZrB2 NbB2 Mo Tc RuBx Rh Pd Ag Cd In Sn Sb Te I Xe
    Cs BaB6 * LuB4
    LuB6
    HfB2 TaBx WxBy ReB2 OsBx Ir Pt Au Hg Tl Pb Bi Po At Rn
    Fr Ra ** Lr Rf Db Sg Bh Hs Mt Ds Rg Cn Nh Fl Mc Lv Ts Og
     
    * LaB4
    LaB6
    CeB4
    CeB6
    PrB4
    PrB6
    NdB4
    NdB6
    Pm SmB4
    SmB6
    EuB6 GdB4
    GdB6
    TbB4
    TbB6
    DyB4
    DyB6
    HoB4
    HoB6
    ErB4
    ErB6
    TmB4
    TmB6
    YbB4
    YbB6
    ** Ac Th Pa UB2 Np PuBx Am Cm Bk Cf Es Fm Md No
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