Paul Rappaport Award: Difference between revisions

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	The '''Paul Rappaport Award''' was established in 1984 to commemorate the achievement of the late American physicist ]. The best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society is given the award annually. The recipients are awarded a certificate and $2,500, presented at the IEEE EDS International Electron Devices Meeting.<ref>{{Cite web \|title=Paul Rappaport Award - IEEE Electron Devices Society \|url=https://eds.ieee.org/awards/paul-rappaport-award \|access-date=2024-12-06 \|website=eds.ieee.org \|language=en-gb}}</ref>		The '''Paul Rappaport Award''' was established in 1984 to commemorate the achievement of the late American physicist ]. The best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society is given the award annually. The recipients are awarded a certificate and $2,500, presented at the IEEE EDS International Electron Devices Meeting.<ref>{{Cite web \|title=Paul Rappaport Award - IEEE Electron Devices Society \|url=https://eds.ieee.org/awards/paul-rappaport-award \|access-date=2024-12-06 \|website=eds.ieee.org \|language=en-gb}}</ref>
Line 16:		Line 13:
	\|-		\|-
	\|1982		\|1982
	\|R. Fabian Pease		\|]
	David B. Tuckerman		]
	\|High-Performance Heat Sinking for ~~VLSI EDL/ED-2/5~~		\|
	\|-		\|-
	\|1983		\|1983
	\|Jaroslav Hynecek		\|]
	\|Electron-Hole Recombination Antiblooming for Virtual-Phase CCD Imager ~~T-ED/ED-30/8~~		\|
	\|-		\|-
	\|1984		\|1984
	\|Shojiro Asai		\|Shojiro Asai
	Norikazu Hashimoto		Norikazu Hashimoto
	Kiyoo Itoh		Kiyoo Itoh
Line 31:		Line 28:
	Hideo Sunami		Hideo Sunami
	Toru Toyabe		Toru Toyabe
	\|A Corrugated Capacitor Cell (CCC) ~~T-ED/ED- 31/6~~		\|
	\|-		\|-
	\|1985		\|1985
Line 42:		Line 39:
	William J. Skocpol		William J. Skocpol
	Donald M. Tennant		Donald M. Tennant
			\|
	\|Single Electron Switching Events in MOSFET's Nanometer-Scale Si, T-ED/ED- 32/
	\|-		\|-
	\|1986		\|1986
	\|Ben T. Ebihara		\|Ben T. Ebihara
	Peter Ramins		Peter Ramins
	\|Improvements in ~~the~~ MDC and TWT ~~Overall~~ ~~Efficiency~~ ~~Through~~ the ~~Application~~ of ~~Carbon~~ ~~Surfaces~~ ~~Electrode T-ED/ED-33/11~~		\|
	\|-		\|-
	\|1987		\|1987
	\|Richard B. True		\|Richard B. True
	\|Emittance and the ~~Design~~ of ~~Beam~~ ~~Formation~~, ~~Transport~~, and ~~Collection~~ ~~Systems~~ in ~~Periodically~~ ~~Focused~~ TWT's ~~T-ED/ED-34/2~~		\|
	\|-		\|-
	\|1988		\|1988
Line 65:		Line 62:
	Simon Yu		Simon Yu
	Todd H. Yuzuriha		Todd H. Yuzuriha
			\|
	\|Process and Device Performance of a High-Speed Double Poly-Si Bipolar Technology Using Process Borosenic-Poly with Coupling-Base Implant T-ED/ED-35/8
	\|-		\|-
	\|1989		\|1989
Line 71:		Line 68:
	Judy L. Hoyt		Judy L. Hoyt
	Clifford A. King		Clifford A. King
			\|
	\|Bandgap and Transport Properties of Si1-xGex by Analysis of Nearly Ideal Si/Si1-xGex/Si Heterojunction Bipolar Transistors T-ED/ED-36/10
	\|-		\|-
	\|1990		\|1990
Line 77:		Line 74:
	Kenichiro Suzuki		Kenichiro Suzuki
	Kensall D. Wise		Kensall D. Wise
			\|
	\|A 1024-Element High-Performance Silicon Tactile Imager T-ED/ED-37/8
	\|-		\|-
	\|1991		\|1991
Line 84:		Line 81:
	Shinji Okazaki		Shinji Okazaki
	Tsuneo Terasawa		Tsuneo Terasawa
			\|
	\|New Approach to Resolution Limit and Advanced Image Formation Techniques in Optical Lithography T-ED/ED-38/1
	\|-		\|-
	\|1992		\|1992
Line 91:		Line 88:
	Loi D. Nguyen		Loi D. Nguyen
	Mark A. Thompson		Mark A. Thompson
			\|
	\|50-nm Self-Aligned Gate Pseudomorphic AllnAs/GalnAs High Electron Mobility Transistors T-ED/ED-39/9
	\|-		\|-
	\|1993		\|1993
Line 98:		Line 95:
	Toyota Morimoto		Toyota Morimoto
	Masakatsu Tsuchiaki		Masakatsu Tsuchiaki
			\|
	\|A New Charge Pumping Method for Determining the Spatial Distribution of Hot-Carrier- Induced Fixed Charge in p- MOSFETS's T-ED/ED-40/10
	\|-		\|-
	\|1994		\|1994
Line 107:		Line 104:
	Koichi Seki		Koichi Seki
	Kazuo Yano		Kazuo Yano
			\|
	\|Room-Temperature Single-Electron Memory T-ED/ED-41/9
	\|-		\|-
	\|1995		\|1995
Line 115:		Line 112:
	Pierre H. Woerlee		Pierre H. Woerlee
	Reinout Woltjer		Reinout Woltjer
	\|Three Hot-Carrier Degradation Mechanisms in Deep-Submicron PMOSFETS ~~T-ED/ED-42/1~~		\|
	\|-		\|-
	\|1996		\|1996
Line 122:		Line 119:
	Carver A. Mead		Carver A. Mead
	Bradley A. Minch		Bradley A. Minch
	\|A Single-Transistor Silicon Synapse ~~T-ED/ED-43/11~~		\|
	\|-		\|-
	\|1997		\|1997
Line 129:		Line 126:
	Carlin J. Vieri		Carlin J. Vieri
	Isabel Y. Yang		Isabel Y. Yang
	\|Back-Gated CMOS on SOIAS For Dynamic Threshold Voltage Control		\|
	\|-		\|-
	\|1998		\|1998
	\|Yujun Li		\|Yujun Li
	Tso-Ping Mai		Tso-Ping Mai
	\|A Front-Gate Charge-Pumping Method for Probing Both Interfaces in SOI Devices		\|
	\|-		\|-
	\|1999		\|1999
Line 148:		Line 145:
	Joy Laskar		Joy Laskar
	M. Ramana Murty		M. Ramana Murty
	\|In (Ga)As/GaAs Self-Organized Quantum Dot Lasers: DC and Small-Signal Modulation Properties		\|
	\|-		\|-
	\|2000		\|2000
Line 162:		Line 159:
	Thomas Skotnicki		Thomas Skotnicki
	Beatrice Tormen		Beatrice Tormen
	\|Silicon-on-Nothing (SON)--an Innovative Process for Advanced CMOS~~, which appeared in the November, 2000 issue of Transactions on Electron Devices.~~		\|
	\|-		\|-
	\| rowspan="2" \|2001		\| rowspan="2" \|2001
	~~\| rowspan="2"~~ \|Ioannis Kymissis		\|Ioannis Kymissis
	Christos D. Dimitrakopoulos		Christos D. Dimitrakopoulos
	Sampath Purusothaman		Sampath Purusothaman
		⚫	\|
⚫	Raymond M. Warner, Jr.
⚫	\|High Performance Bottom Electrode Organic Thin-Film Transistors~~, which appeared in the June 2001 issue of T-ED.~~
	\|-		\|-
		⚫	\|Raymond M. Warner, Jr.
	\|Microelectronics: Its Unusual Origin and Personality, which appeared in the November 2001 issue of T-ED.
			\|
	\|-		\|-
	\|2002		\|2002
Line 181:		Line 178:
	Jeffrey Bokor		Jeffrey Bokor
	Chenming Hu		Chenming Hu
	\|Design & Fabrication of 50-nm Thin-Body p-MOSFETS with a Silicon-Germanium Heterostructure Channel		\|
	\|-		\|-
	\|2003		\|2003
Line 188:		Line 185:
	Ryuji Ohba		Ryuji Ohba
	Akira Toriumi		Akira Toriumi
	\|Programmable Single - Electron Transistor Logic for future Low-Power Intelligent LSI : Proposal and Room - Temperature Operation		\|
	\|-		\|-
	\|2004		\|2004
Line 196:		Line 193:
	Moyra K. McManus		Moyra K. McManus
	Mark B. Ketchen		Mark B. Ketchen
	\|Testing and Diagnostics of CMOS Circuits Using Light Emission from Off-State Leakage Current		\|
	\|-		\|-
	\|2005		\|2005
Line 204:		Line 201:
	Raymond Wood		Raymond Wood
	Christoph Jungemann		Christoph Jungemann
	\|Impact Ionization MOS (I-MOS) - Part I: Device and Circuit Simulations and Part II: Experimental Results		\|
	\|-		\|-
	\|2006		\|2006
Line 211:		Line 208:
	Lukas Worschech		Lukas Worschech
	David Hartmann		David Hartmann
	\|Cascaded Quantum Wires and Integrated Design for Complex Logic Functions: Nanoelectronic Full Adder		\|
	\|-		\|-
	\|2007		\|2007
	\|Azad Naeemi		\|Azad Naeemi
	James D. Meindl		James D. Meindl
	\|Design and Performance Modeling for Single-Walled Carbon Nanotubes as Local, Semiglobal, and Global Interconnects in Gigascale Integrated Systems		\|
	\|-		\|-
	\|2008		\|2008
Line 225:		Line 222:
	Narayanan Balasumbramanian		Narayanan Balasumbramanian
	Yee-Chia Yeo		Yee-Chia Yeo
	\|Strained n-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance		\|
	\|-		\|-
	\|2009		\|2009
Line 235:		Line 232:
	Makoto Takamiya		Makoto Takamiya
	Takayasu Sakurai		Takayasu Sakurai
	\|Printed Nonvolatile Memory for a Sheet-Type Communication System		\|
	\|-		\|-
	\|2010		\|2010
Line 245:		Line 242:
	Takayasu Sakurai		Takayasu Sakurai
	Takao Someya		Takao Someya
	\|Large-Area Flexible Ultrasonic Imaging System With an Organic-Transistor Active Matrix		\|
	\|-		\|-
	\|2011		\|2011
Line 259:		Line 256:
	MarÃa Toledano Luque		MarÃa Toledano Luque
	Michael Nelhiebel		Michael Nelhiebel
	\|The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps		\|
	\|-		\|-
	\|2012		\|2012
	\|Kelin Kuhn		\|Kelin Kuhn
	\|Considerations for Ultimate CMOS Scaling		\|
	\|-		\|-
	\|2013		\|2013
Line 272:		Line 269:
	Mitsuru Takenaka		Mitsuru Takenaka
	Shinichi Takagias		Shinichi Takagias
	\|High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation		\|
	\|-		\|-
	\|2014		\|2014
Line 281:		Line 278:
	Vincent Delaye		Vincent Delaye
	Dominique Lafond		Dominique Lafond
	\|Top-Down Fabrication of Epitaxial SiGe/Si Multi-(Core/Shell) p-FET Nanowire Transistors		\|
	\|-		\|-
	\|2015		\|2015
Line 289:		Line 286:
	Daniel C. Wang		Daniel C. Wang
	Daniele Ielmini		Daniele Ielmini
	\|Noise-Induced Resistance Broadening in Resistive Switching Memory Part I: Intrinsic Cell Behavior / Part II: Array Statistics		\|
	\|-		\|-
	\|2016		\|2016
Line 295:		Line 292:
	Takeshi Hakii		Takeshi Hakii
	Suguru Noda		Suguru Noda
	\|A Color-Tunable Polychromatic Organic-Light-Emitting-Diode Device With Low Resistive Intermediate Electrode for Rollto-Roll Manufacturing		\|
	\|-		\|-
	\|2017		\|2017
	\|L. Witters, H. Arimura, F. Sebaai, A. Hikavyy, A. P. Milenin, R. Loo, A. De Keersgieter, G. Eneman, T. Schram, K. Wostyn, K. Devriendt, A. Schulze, R. Lieten, S. Bilodeau, E. Cooper, P. Storck, E. Chiu, C. Vrancken, P. Favia, E. Vancoille, J. Mitard, R. Langer, A. Opdebeeck, F. Holsteyns, N. Waldron, K. Barla, V. De Heyn, D. Mocuta, and N. Collaert		\|L. Witters, H. Arimura, F. Sebaai, A. Hikavyy, A. P. Milenin, R. Loo, A. De Keersgieter, G. Eneman, T. Schram, K. Wostyn, K. Devriendt, A. Schulze, R. Lieten, S. Bilodeau, E. Cooper, P. Storck, E. Chiu, C. Vrancken, P. Favia, E. Vancoille, J. Mitard, R. Langer, A. Opdebeeck, F. Holsteyns, N. Waldron, K. Barla, V. De Heyn, D. Mocuta, and N. Collaert
	\|Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition		\|
	\|-		\|-
	\|2018		\|2018
	\|Konstantin Osipov, Joachim Wuerfl, Ina Ostermay, Frank Brunner, Günther Tränkle and Maniteja Bodduluri		\|Konstantin Osipov, Joachim Wuerfl, Ina Ostermay, Frank Brunner, Günther Tränkle and Maniteja Bodduluri
	\|Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology		\|
	\|-		\|-
	\|2019		\|2019
	\|Kihyun Choi, Hyun Chul Sagong, Wonchang Kang, Hyunjin Kim, Jiang Hai, Miji Lee, Bomi Kim, Mi-ji Lee, Soonyoung Lee, Hyewon Shim, Junekyun Park, YoungWoo Cho, Hwa Sung Rhee and Sangwoo Pae		\|Kihyun Choi, Hyun Chul Sagong, Wonchang Kang, Hyunjin Kim, Jiang Hai, Miji Lee, Bomi Kim, Mi-ji Lee, Soonyoung Lee, Hyewon Shim, Junekyun Park, YoungWoo Cho, Hwa Sung Rhee and Sangwoo Pae
	\|Enhanced Reliability of 7nm Process Technology Featuring EUV		\|
	\|-		\|-
	\|2020		\|2020
	\|Kangguo Cheng, Chanro Park, Heng Wu, Juntao Li, Son Nguyen, Jingyun Zhang, Miaomiao Wang, Sanjay Mehta, Zuoguang Liu, Richard Conti, Nicholas J. Loubet, Julien Frougier, Andrew Greene, Tenko Yamashita, Balasubramanian Haran and Rama Divakaruni		\|Kangguo Cheng, Chanro Park, Heng Wu, Juntao Li, Son Nguyen, Jingyun Zhang, Miaomiao Wang, Sanjay Mehta, Zuoguang Liu, Richard Conti, Nicholas J. Loubet, Julien Frougier, Andrew Greene, Tenko Yamashita, Balasubramanian Haran and Rama Divakaruni
	\|Improved Air Spacer for Highly Scaled CMOS Technology		\|
	\|-		\|-
	\|2021		\|2021
	\|Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto, Mototaka Ochi, Hiroshi Goto and Masaharu Kobayashi		\|Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto, Mototaka Ochi, Hiroshi Goto and Masaharu Kobayashi
	\|Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application		\|
	\|-		\|-
	\|2022		\|2022
	\|Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui, Ralf Flückiger, Tamara Saranovac, Daxin Han, Diego Marti, Giorgio Bonomo, Rimjhim Chaudhary, Olivier Ostinelli, and Colombo R. Bolognesi		\|Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui, Ralf Flückiger, Tamara Saranovac, Daxin Han, Diego Marti, Giorgio Bonomo, Rimjhim Chaudhary, Olivier Ostinelli, and Colombo R. Bolognesi
	\|InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz		\|
	\|-		\|-
	\|2023		\|2023
	\|Weiyi Li, Brian Romanczyk, Matthew Guidry, Emre Akso, Nirupam Hatui, Christian Wurm, Wenjian Liu, Pawana Shrestha, Henry Collins, Christopher Clymore, Stacia Keller, and Umesh K. Mishra		\|Weiyi Li, Brian Romanczyk, Matthew Guidry, Emre Akso, Nirupam Hatui, Christian Wurm, Wenjian Liu, Pawana Shrestha, Henry Collins, Christopher Clymore, Stacia Keller, and Umesh K. Mishra
	\|Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs		\|
	\|}		\|}



	== See also ==		== See also ==
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	== References ==		== References ==

	<!-- Inline citations added to your article will automatically display here. See en.wikipedia.org/WP:REFB for instructions on how to add citations. -->
	{{reflist}}		{{reflist}}

			]

Latest revision as of 08:09, 28 December 2024

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IEEE award

The Paul Rappaport Award was established in 1984 to commemorate the achievement of the late American physicist Paul Rappaport. The best paper appearing in a fast turn around archival publication of the IEEE Electron Devices Society is given the award annually. The recipients are awarded a certificate and $2,500, presented at the IEEE EDS International Electron Devices Meeting.

Recipients

The past recipients are:


Year	Recipient(s)	Paper
1982	R. Fabian Pease David B. Tuckerman	High-Performance Heat Sinking for VLS
1983	Jaroslav Hynecek	Electron-Hole Recombination Antiblooming for Virtual-Phase CCD Imager
1984	Shojiro Asai Norikazu Hashimoto Kiyoo Itoh Tokuo Kure Hideo Sunami Toru Toyabe	A Corrugated Capacitor Cell (CCC)
1985	Roger Epworth Linus A. Fetter Richard E. Howard Lawrence D. Jackel Paul M. Mankiewich Kristan S. Ralls William J. Skocpol Donald M. Tennant	Single electron switching events in nanometer-scale Si MOSFET's
1986	Ben T. Ebihara Peter Ramins	Improvements in MDC and TWT overall efficiency through the application of carbon electrode surfaces
1987	Richard B. True	Emittance and the design of beam formation, transport, and collection systems in periodically focused TWT's
1988	Diane R. Ahrendt Yeou-Chong Vladimir F. Drobny Valdis E. Garuts Robert D. Herman Eric E. Lane June S. Lee Evan E. Patton Tadanori Yamaguchi Simon Yu Todd H. Yuzuriha	Process and device performance of a high-speed double poly-Si bipolar technology using borosenic-poly process with coupling-base implant
1989	James F. Gibbons Judy L. Hoyt Clifford A. King	Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
1990	Khalil Najafi Kenichiro Suzuki Kensall D. Wise	A 1024-element high-performance silicon tactile imager
1991	Hiroshi Fukuda Akira Imai Shinji Okazaki Tsuneo Terasawa	New approach to resolution limit and advanced image formation techniques in optical lithography
1992	April S. Brown Linda M. Jelloian Loi D. Nguyen Mark A. Thompson	50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
1993	Hisashi Hara Hiroshi Iwai Toyota Morimoto Masakatsu Tsuchiaki	A new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFETs
1994	Takashi Hashimoto Tomoyuki Ishii Takashi Kobayashi Fumio Murai Koichi Seki Kazuo Yano	Room-temperature single-electron memory
1995	Herbert Lifka Ger M. Paulzen Henk G. Pomp Pierre H. Woerlee Reinout Woltjer	Three Hot-Carrier Degradation Mechanisms in Deep-Submicron PMOSFETS
1996	Chris J. Diorio Paul E. Hasler Carver A. Mead Bradley A. Minch	A Single-Transistor Silicon Synapse
1997	Dimitri A. Antoniadis Anantha P. Chandrakasan Carlin J. Vieri Isabel Y. Yang	Back-Gated CMOS on SOIAS For Dynamic Threshold Voltage Control
1998	Yujun Li Tso-Ping Mai	A Front-Gate Charge-Pumping Method for Probing Both Interfaces in SOI Devices
1999	Pallab Bhattacharya Kishore K. Kamath Jasprit Singh David Klotzkin Jamie Phillips Hong-Tao Jiang Nalini Chervela Theodore B. Norris Tom Sosnowski Joy Laskar M. Ramana Murty	In (Ga)As/GaAs Self-Organized Quantum Dot Lasers: DC and Small-Signal Modulation Properties
2000	Didier Dutartre Malgorzata Jurczak Damien Lenoble Jose Martins Stephanie Monfray Roland Pantel M. Paoli Jorge Luis Regolini Pascal Ribot Thomas Skotnicki Beatrice Tormen	Silicon-on-Nothing (SON)--an Innovative Process for Advanced CMOS
2001	Ioannis Kymissis Christos D. Dimitrakopoulos Sampath Purusothaman	High Performance Bottom Electrode Organic Thin-Film Transistors
2001	Raymond M. Warner, Jr.	Microelectronics: Its Unusual Origin and Personality
2002	Yee Chia Yeo Vivek Subramanian Jakub Kedzierski Peiqi Xuan Tsu-Jae King Jeffrey Bokor Chenming Hu	Design & Fabrication of 50-nm Thin-Body p-MOSFETS with a Silicon-Germanium Heterostructure Channel
2003	Ken Uchida Junji Koga Ryuji Ohba Akira Toriumi	Programmable Single-Electron Transistor Logic for future Low-Power Intelligent LSI : Proposal and Room-Temperature Operation
2004	Franco Stellari Peilin Song James C. Tsang Moyra K. McManus Mark B. Ketchen	Testing and Diagnostics of CMOS Circuits Using Light Emission from Off-State Leakage Current
2005	Kailash Gopalakrishnan Peter B. Griffin James D. Plummer Raymond Wood Christoph Jungemann	Impact Ionization MOS (I-MOS) - Part I: Device and Circuit Simulations and Part II: Experimental Results
2006	Billy Lau Alfred Forchel Lukas Worschech David Hartmann	Cascaded Quantum Wires and Integrated Design for Complex Logic Functions: Nanoelectronic Full Adder
2007	Azad Naeemi James D. Meindl	Design and Performance Modeling for Single-Walled Carbon Nanotubes as Local, Semiglobal, and Global Interconnects in Gigascale Integrated Systems
2008	Kah-Wee Ang Jian Qiang Lin Ganesh S. Samudra Shih-Hang Tung Narayanan Balasumbramanian Yee-Chia Yeo	Strained n-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance
2009	Takao Someya Tsuyoshi Sekitani Koichiro Zaitsu Yoshiaki Noguchi Kiyoshiro Ishibe Makoto Takamiya Takayasu Sakurai	Printed Nonvolatile Memory for a Sheet-Type Communication System
2010	Yusaku Kato Tsuyoshi Sekitani Yoshiaki Noguchi Tomoyuki Yokota Makoto Takamiya Takayasu Sakurai Takao Someya	Large-Area Flexible Ultrasonic Imaging System With an Organic-Transistor Active Matrix
2011	Tibor Grasser Ben Kaczer Wolfgang Goes Hans Reisinger Thomas Aichinger Philipp Hehenberger Paul-JÃ¼rgen Wagner Franz Schanovsky Jacopo Franco MarÃa Toledano Luque Michael Nelhiebel	The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps
2012	Kelin Kuhn	Considerations for Ultimate CMOS Scaling
2013	Rui Zhang Po-Chin Huang Ju-Chin Lin Noriyuki Taoka Mitsuru Takenaka Shinichi Takagias	High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation
2014	Sylvain Barraud Jean-Michel Hartmann Virginie Maffini-Alvaro Lucie Tosti Vincent Delaye Dominique Lafond	Top-Down Fabrication of Epitaxial SiGe/Si Multi-(Core/Shell) p-FET Nanowire Transistors
2015	Stefano Ambrogio Simone Balatti Vincent McCaffrey Daniel C. Wang Daniele Ielmini	Noise-Induced Resistance Broadening in Resistive Switching Memory Part I: Intrinsic Cell Behavior / Part II: Array Statistics
2016	Takatoshi Tsujimura Takeshi Hakii Suguru Noda	A Color-Tunable Polychromatic Organic-Light-Emitting-Diode Device With Low Resistive Intermediate Electrode for Rollto-Roll Manufacturing
2017	L. Witters, H. Arimura, F. Sebaai, A. Hikavyy, A. P. Milenin, R. Loo, A. De Keersgieter, G. Eneman, T. Schram, K. Wostyn, K. Devriendt, A. Schulze, R. Lieten, S. Bilodeau, E. Cooper, P. Storck, E. Chiu, C. Vrancken, P. Favia, E. Vancoille, J. Mitard, R. Langer, A. Opdebeeck, F. Holsteyns, N. Waldron, K. Barla, V. De Heyn, D. Mocuta, and N. Collaert	Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition
2018	Konstantin Osipov, Joachim Wuerfl, Ina Ostermay, Frank Brunner, Günther Tränkle and Maniteja Bodduluri	Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology
2019	Kihyun Choi, Hyun Chul Sagong, Wonchang Kang, Hyunjin Kim, Jiang Hai, Miji Lee, Bomi Kim, Mi-ji Lee, Soonyoung Lee, Hyewon Shim, Junekyun Park, YoungWoo Cho, Hwa Sung Rhee and Sangwoo Pae	Enhanced Reliability of 7nm Process Technology Featuring EUV
2020	Kangguo Cheng, Chanro Park, Heng Wu, Juntao Li, Son Nguyen, Jingyun Zhang, Miaomiao Wang, Sanjay Mehta, Zuoguang Liu, Richard Conti, Nicholas J. Loubet, Julien Frougier, Andrew Greene, Tenko Yamashita, Balasubramanian Haran and Rama Divakaruni	Improved Air Spacer for Highly Scaled CMOS Technology
2021	Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto, Mototaka Ochi, Hiroshi Goto and Masaharu Kobayashi	Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application
2022	Akshay M. Arabhavi, Filippo Ciabattini, Sara Hamzeloui, Ralf Flückiger, Tamara Saranovac, Daxin Han, Diego Marti, Giorgio Bonomo, Rimjhim Chaudhary, Olivier Ostinelli, and Colombo R. Bolognesi	InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz
2023	Weiyi Li, Brian Romanczyk, Matthew Guidry, Emre Akso, Nirupam Hatui, Christian Wurm, Wenjian Liu, Pawana Shrestha, Henry Collins, Christopher Clymore, Stacia Keller, and Umesh K. Mishra	Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs

References

"Paul Rappaport Award - IEEE Electron Devices Society". eds.ieee.org. Retrieved 2024-12-06.

Category:

Institute of Electrical and Electronics Engineers

Latest revision as of 08:09, 28 December 2024

Recipients

See also

References