Misplaced Pages:WikiProject Chemicals/Chembox validation/VerifiedDataSandbox: Difference between revisions

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Revision as of 12:34, 15 February 2012 editBeetstra (talk \| contribs)Edit filter managers, Administrators172,031 edits Saving copy of the {{chembox}} taken from revid 476973632 of page Sulfur_hexafluoride for the Chem/Drugbox validation project (updated: 'UNII', 'KEGG').← Previous edit		Revision as of 12:34, 15 February 2012 edit undoBeetstra (talk \| contribs)Edit filter managers, Administrators172,031 edits Saving copy of the {{chembox}} taken from revid 473657671 of page Gallium_nitride for the Chem/Drugbox validation project (updated: '').Next edit →
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	{{ambox \| text = This page contains a copy of the infobox ({{tl\|chembox}}) taken from revid of page ] with values updated to verified values.}}		{{ambox \| text = This page contains a copy of the infobox ({{tl\|chembox}}) taken from revid of page ] with values updated to verified values.}}
	{{~~Chembox~~		{{chembox
	\| ~~Verifiedfields~~ = changed		\| Watchedfields = changed
	\| verifiedrevid = ~~470482697~~		\| verifiedrevid = 450764160
			\| Name = Gallium nitride
	\| ImageFileL1 = Sulfur-hexafluoride-2D-dimensions.png
			\| ImageFile = GaNcrystal.jpg
	\| ImageFileL1_Ref = {{chemboximage\|correct\|??}}
			\| ImageFile2 = Wurtzite polyhedra.png
	\| ImageSizeL1 = 121
			\| IUPACName = Gallium nitride
	\| ImageNameL1 = Skeletal formula of sulfur hexafluoride with assorted dimensions
			\| OtherNames =
	\| ImageFileR1 = Sulfur-hexafluoride-3D-vdW.png
			\| Name =
	\| ImageFileR1_Ref = {{chemboximage\|correct\|??}}
	\| ImageSizeR1 = 121
	\| ImageNameR1 = Spacefill model of sulfur hexafluoride
	\| ImageFile2 = Sulfur-hexafluoride-3D-balls.png
	\| ImageFile2_Ref = {{chemboximage\|correct\|??}}
	\| ImageSize2 = 121
	\| ImageName2 = Ball and stick model of sulfur hexafluoride
	\| IUPACName = Sulfur hexafluoride
	\| SystematicName = Hexafluoro-λ<sup>6</sup>-sulfane<ref>{{Cite web\|title = Sulfur Hexafluoride - PubChem Public Chemical Database\|url = http://pubchem.ncbi.nlm.nih.gov/summary/summary.cgi?cid=17358\|work = The PubChem Project\|location = USA\|publisher = National Center for Biotechnology Information}}</ref>
	\| OtherNames = Elagas<br />
	Esaflon<br />
	Sulfur(VI) fluoride<br />
	Sulfuric fluoride
	\| Section1 = {{Chembox Identifiers		\| Section1 = {{Chembox Identifiers
			\| ChemSpiderID_Ref = {{chemspidercite\|correct\|chemspider}}
	\| CASNo = 2551-62-4
			\| ChemSpiderID = 105057
	\| CASNo_Ref = {{cascite\|correct\|CAS}}
			\| InChI = 1/Ga.N/rGaN/c1-2
	\| PubChem = 17358
			\| SMILES = #N
	\| PubChem_Ref = {{Pubchemcite}}
			\| InChIKey = JMASRVWKEDWRBT-MDMVGGKAAI
	\| ChemSpiderID = 16425
	\| ~~ChemSpiderID_Ref~~ = {{~~chemspidercite~~\|correct\|chemspider}}		\| StdInChI_Ref = {{stdinchicite\|correct\|chemspider}}
			\| StdInChI = 1S/Ga.N
	\| UNII = <!-- blanked - oldvalue: WS7LR3I1D6 -->
			\| StdInChIKey_Ref = {{stdinchicite\|correct\|chemspider}}
	\| UNII_Ref = {{fdacite\|changed\|FDA}}
			\| StdInChIKey = JMASRVWKEDWRBT-UHFFFAOYSA-N
	\| EINECS = 219-854-2
	\| ~~UNNumber~~ = ~~1080~~		\| CASNo = 25617-97-4
			\| CASNo_Ref = {{cascite\|correct\|CAS}}
	\| KEGG = <!-- blanked - oldvalue: D05962 -->
			\| PubChem = 117559
	\| KEGG_Ref = {{keggcite\|changed\|kegg}}
			\| RTECS = LW9640000
	\| MeSHName = Sulfur+hexafluoride
	\| ChEBI_Ref = {{ebicite\|correct\|EBI}}
	\| ChEBI = 30496
	\| RTECS = WS4900000
	\| ATCCode_prefix = V08
	\| ATCCode_suffix = DA05
	\| Gmelin = 2752
	\| SMILES = FS(F)(F)(F)(F)F
	\| StdInChI_Ref = {{stdinchicite\|correct\|chemspider}}
	\| StdInChI = 1S/F6S/c1-7(2,3,4,5)6
	\| StdInChIKey = SFZCNBIFKDRMGX-UHFFFAOYSA-N
	\| StdInChIKey_Ref = {{stdinchicite\|correct\|chemspider}}
	}}		}}
	\| Section2 = {{Chembox Properties		\| Section2 = {{Chembox Properties
	\| F = 6		\| Formula = GaN
			\| MolarMass = 83.73 g/mol
	\| S = 1
			\| Appearance = yellow powder
	\| ExactMass = 145.962489920 g mol<sup>-1</sup>
			\| Density = 6.15 g/cm<sup>3</sup>
	\| Appearance = Colorless, odorless gas
	\| ~~Density~~ = 6.~~17 g/l~~		\| Solubility = Reacts.
			\| MeltingPt = >2500°C<ref name=melting>{{cite journal\| author = T. Harafuji and J. Kawamura\|title = Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal\| doi = 10.1063/1.1772878\|journal = Appl. Phys.\|volume = 96\| page = 2501\|year = 2004\| issue = 5}}</ref>
	\| BoilingPtK = 209
			\| BoilingPt =
	\| VaporPressure = 2.9 kPa (at 21.1°C)
			\| pKb =
			\| BandGap = 3.4 eV (300 K, direct)
			\| ElectronMobility = 440 cm<sup>2</sup>/(V·s) (300 K)
			\| ThermalConductivity = 2.3 W/(cm·K) (300 K) <ref>Mion, Christian. "Investigation of the Thermal Properties of Gallium
			Nitride Using the Three Omega Technique." Diss. North Carolina State University. Raleigh, 2005. Web, Aug 12, 2011. http://repository.lib.ncsu.edu/ir/bitstream/1840.16/5418/1/etd.pdf.</ref>
			\| RefractIndex = 2.429
	}}		}}
	\| Section3 = {{Chembox Structure		\| Section3 = {{Chembox Structure
	\| CrystalStruct = ], ]		\| CrystalStruct = ]
	\| SpaceGroup = O<sub>''h''</sub>		\| SpaceGroup = ''C''<sub>6v</sub><sup>4</sup>-''P''6<sub>3</sub>''mc''
	\| Coordination = ~~Orthogonal hexagonal~~		\| Coordination = Tetrahedral
			\| LattConst_a = 3.186 Å
	\| MolShape = Octahedral
			\| LattConst_c = 5.186 Å <ref>Bougrov V., Levinshtein M.E., Rumyantsev S.L., Zubrilov A., in ''Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe''. Eds. Levinshtein M.E., Rumyantsev S.L., Shur M.S., John Wiley & Sons, Inc., New York, 2001, 1–30</ref>
	\| Dipole = 0 D
	}}		}}
	\| ~~Section4~~ = {{Chembox ~~Thermochemistry~~		\| Section7 = {{Chembox Hazards
			\| EUIndex = Not listed
	\| DeltaHf = −1209 kJ·mol<sup>−1</sup><ref name=b1>{{cite book\| author = Zumdahl, Steven S.\|title =Chemical Principles 6th Ed.\| publisher = Houghton Mifflin Company\| year = 2009\| isbn = 061894690X\|page=A23}}</ref>
			\| RPhrases =
	\| Entropy = 292 J·mol<sup>−1</sup>·K<sup>−1</sup><ref name=b1/>
			\| SPhrases =
	}}
			\| FlashPt = Non-flammable.
	\| Section5 = {{Chembox Hazards
			}}
	\| ExternalMSDS =
	\| ~~SPhrases~~ = {{~~S38}}~~		\| Section8 = {{Chembox Related
			\| OtherAnions = ]<br/>]<br/>]
	\| NFPA-H = 0
			\| OtherCations = ]<br/>]<br/>]
	\| NFPA-F = 0
	\| ~~NFPA-R~~ = 0		\| Function =
			\| OtherFunctn =
			\| OtherCpds = ]<br/>]<br/>]<br/>]<br/>]
	}}		}}
	\| Section6 = {{Chembox Related
	\| OtherCations =
	\| Function = sulfur fluorides
	\| OtherFunctn = ]<br />
	]
	\| OtherCpds = ]<br />
	]<br />
	]
	}}
	}}		}}

Revision as of 12:34, 15 February 2012

This page contains a copy of the infobox ({{chembox}}) taken from revid 473657671 of page Gallium_nitride with values updated to verified values.

WikiProject Chemicals/Chembox validation/VerifiedDataSandbox
Names


IUPAC name Gallium nitride
Identifiers
CAS Number	25617-97-4
3D model (JSmol)	Interactive image
ChemSpider	105057
PubChem CID	117559
RTECS number	LW9640000
InChI InChI=1S/Ga.NKey: JMASRVWKEDWRBT-UHFFFAOYSA-N InChI=1/Ga.N/rGaN/c1-2Key: JMASRVWKEDWRBT-MDMVGGKAAI
SMILES #N
Properties
Chemical formula	GaN
Molar mass	83.73 g/mol
Appearance	yellow powder
Density	6.15 g/cm
Melting point	>2500°C
Solubility in water	Reacts.
Band gap	3.4 eV (300 K, direct)
Electron mobility	440 cm/(V·s) (300 K)
Thermal conductivity	2.3 W/(cm·K) (300 K)
Refractive index (n_D)	2.429
Structure
Crystal structure	Wurtzite
Space group	C_6v-P6₃mc
Lattice constant	a = 3.186 Å, c = 5.186 Å
Coordination geometry	Tetrahedral
Hazards
Flash point	Non-flammable.
Related compounds
Other anions	Gallium phosphide Gallium arsenide Gallium antimonide
Other cations	Boron nitride Aluminium nitride Indium nitride
Except where otherwise noted, data are given for materials in their standard state (at 25 °C , 100 kPa). Y verify (what is ?) Infobox references

Chemical compound

T. Harafuji and J. Kawamura (2004). "Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal". Appl. Phys. 96 (5): 2501. doi:10.1063/1.1772878.
Mion, Christian. "Investigation of the Thermal Properties of Gallium Nitride Using the Three Omega Technique." Diss. North Carolina State University. Raleigh, 2005. Web, Aug 12, 2011. http://repository.lib.ncsu.edu/ir/bitstream/1840.16/5418/1/etd.pdf.
Bougrov V., Levinshtein M.E., Rumyantsev S.L., Zubrilov A., in Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. Eds. Levinshtein M.E., Rumyantsev S.L., Shur M.S., John Wiley & Sons, Inc., New York, 2001, 1–30