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The 2N7000 and BS170 are N-channel, enhancement-mode MOSFETs used for low-power switching applications. The two are nearly identical except that the leads are arranged differently and the current ratings are somewhat different; they are typically listed together on the same datasheet, along with other variants 2N7002, VQ1000J, and VQ1000P.
The 2N7000 is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use, along with such other popular discrete semiconductors as the diodes 1N4148, 1N4001, and 1N4007, and BJTs 2N2222, 2N3904, and 2N3906. The BS250P is "a good p-channel analog of the 2N7000."
The 2N7002 is a slightly higher resistance, lower current variant, in a TO-236 package. The VP1000J and VP1000P are 16-pin DIP packages with four transistors per package, plastic and sidebraze respectively.
Packaged in a TO92 enclosure, both the 2N7000 and BS170 are 60 V devices, capable of switching 200 mA (2N7000) or 500 mA (BS170), with a maximum on-resistance of 5 Ω at 10 V Vgs. The 2N7000 has been referred to as a "FETlington" and as an "absolutely ideal hacker part."
A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays. In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages:
- low threshold voltage means no gate bias required
- high input impedance of the insulated gate means almost no gate current is required
- consequently no current-limiting resistor is required in the gate input
The main disadvantages of these FETs over bipolar transistors in switching are the following:
- susceptibility to cumulative damage from static discharge prior to installation
- circuits with external gate exposure require a protection gate resistor or other static discharge protection
- Non-zero ohmic response when driven to saturation, as compared to a constant junction voltage drop in a bipolar junction transistor
The circuit symbol for the 2N7000 generally does not show the internal diode formed by the substrate connection source to drain. 
References
- ^ "2N7000/2N7002, VQ1000J/P, BS170" (PDF). Vishay Siliconix datasheet. Retrieved 28 March 2011.
- H. Ward Silver (2005). Two-way radios & scanners for dummies. p. 237. ISBN 9780764595820.
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Lucio Di Jasio, Tim Wilmshurst, and Dogan Ibrahim (2007). PIC microcontrollers. Newnes. p. 520. ISBN 9780750686150.
{{cite book}}: CS1 maint: multiple names: authors list (link) - Modern electronics, Volume 3. Modern Electronics, Inc. 1986. p. 115.
External links
- Datasheet for On Semiconductor's 2N7000 (PDF)
- Application Notes for Experimenters
- E-Field Sensor demonstrates extremely high gate impedance with a simple LED circuit
- Driving a single MOSFET Detailed description of usage of a similar MOSFET
- Datasheet for On Semiconductor's BS170
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