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Trimethylgallium

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Trimethylgallium
Structural formula of trimethylgallium
Ball-and-stick model of trimethylgallium
Names
IUPAC name trimethylgallane, trimethanidogallium
Identifiers
CAS Number
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.014.452 Edit this at Wikidata
PubChem CID
CompTox Dashboard (EPA)
InChI
  • InChI=1S/3CH3.Ga/h3*1H3;Key: XCZXGTMEAKBVPV-UHFFFAOYSA-N
  • InChI=1/3CH3.Ga/h3*1H3;/rC3H9Ga/c1-4(2)3/h1-3H3Key: XCZXGTMEAKBVPV-YHXBHQJBAF
SMILES
  • (C)(C)C
Properties
Chemical formula Ga(CH3)3
Molar mass 114.827 g/mol
Appearance clear colourless liquid
Melting point −15 °C
Boiling point 55.7 °C
Hazards
Occupational safety and health (OHS/OSH):
Main hazards pyrophoric
Except where otherwise noted, data are given for materials in their standard state (at 25 °C , 100 kPa). checkY verify (what is  ?) Infobox references
Chemical compound

Trimethylgallium, Ga(CH3)3, often abbreviated to TMG or TMGa, is the preferred metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of gallium-containing compound semiconductors, such as GaAs, GaN, GaP, GaSb, InGaAs, InGaN, AlGaInP, InGaP and AlInGaNP.

Properties

TMG is a clear, colorless, pyrophoric liquid. Even the hydrocarbon solutions of TMG, when sufficiently saturated, are known to catch fire on exposure to air. TMG is known to react violently with water and other compounds that are capable of providing labile and active hydrogen (i.e. protons). Therefore, TMG needs to be handled with care and caution, e.g. stored in a cool, dry place at 0-25 °C, under inert atmosphere, and ensuring that storage temperatures would not exceed 40 °C to avoid deterioration.

Preparation

Trimethylgallium may be prepared by the reaction of dimethylzinc with gallium trichloride. The less volatile diethyl ether adduct can be prepared by using methylmagnesium iodide in ether in place of dimethylzinc; the ether ligands may be displaced with liquid ammonia as well.

Applications

The material is used in the production of LED lighting and semiconductors as a metalorganic chemical vapor deposition precursor.

References

  1. Shenaikhatkhate, D; Goyette, R; Dicarlojr, R; Dripps, G (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272: 816. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.
  2. C. A. Kraus; F. E. Toonder (1933). "Trimethyl gallium, Trimethyl gallium etherate and Trimethyl gallium ammine". PNAS. 19 (3): 292–298. doi:10.1073/pnas.19.3.292. PMC 1085965. PMID 16577510.{{cite journal}}: CS1 maint: multiple names: authors list (link)
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