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Revision as of 12:34, 15 February 2012 by Beetstra (talk | contribs) (Saving copy of the {{chembox}} taken from revid 473657671 of page Gallium_nitride for the Chem/Drugbox validation project (updated: '').)(diff) ← Previous revision | Latest revision (diff) | Newer revision → (diff) | This page contains a copy of the infobox ({{chembox}}) taken from revid 473657671 of page Gallium_nitride with values updated to verified values. |
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| Names | |
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| IUPAC name Gallium nitride | |
| Identifiers | |
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| Properties | |
| Chemical formula | GaN |
| Molar mass | 83.73 g/mol |
| Appearance | yellow powder |
| Density | 6.15 g/cm |
| Melting point | >2500°C |
| Solubility in water | Reacts. |
| Band gap | 3.4 eV (300 K, direct) |
| Electron mobility | 440 cm/(V·s) (300 K) |
| Thermal conductivity | 2.3 W/(cm·K) (300 K) |
| Refractive index (nD) | 2.429 |
| Structure | |
| Crystal structure | Wurtzite |
| Space group | C6v-P63mc |
| Lattice constant | a = 3.186 Å, c = 5.186 Å |
| Coordination geometry | Tetrahedral |
| Hazards | |
| Flash point | Non-flammable. |
| Related compounds | |
| Other anions | Gallium phosphide Gallium arsenide Gallium antimonide |
| Other cations | Boron nitride Aluminium nitride Indium nitride |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C , 100 kPa).
 Y verify (what is ?)
Infobox references
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- T. Harafuji and J. Kawamura (2004). "Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal". Appl. Phys. 96 (5): 2501. doi:10.1063/1.1772878.
- Mion, Christian. "Investigation of the Thermal Properties of Gallium Nitride Using the Three Omega Technique." Diss. North Carolina State University. Raleigh, 2005. Web, Aug 12, 2011. http://repository.lib.ncsu.edu/ir/bitstream/1840.16/5418/1/etd.pdf.
- Bougrov V., Levinshtein M.E., Rumyantsev S.L., Zubrilov A., in Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. Eds. Levinshtein M.E., Rumyantsev S.L., Shur M.S., John Wiley & Sons, Inc., New York, 2001, 1–30