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{{chembox |
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{{chembox |
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| verifiedrevid = 404109559 |
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| verifiedrevid = 427708720 |
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| ImageFile = Boron-phosphide-unit-cell-1963-CM-3D-balls.png |
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| ImageFile = Boron-phosphide-unit-cell-1963-CM-3D-balls.png |
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| ImageSize = |
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| ImageSize = |
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| IUPACName = |
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| IUPACName = |
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| OtherNames = |
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| OtherNames = |
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| Section1 = {{Chembox Identifiers |
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|Section1={{Chembox Identifiers |
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| CASNo_Ref = {{cascite|correct|??}} |
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| CASNo = 20205-91-8 |
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| CASNo = 20205-91-8 |
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| ChemSpiderID = 79763 |
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| EC_number = 243-593-3 |
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| PubChem = 88409 |
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| PubChem = 88409 |
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| StdInChI=1S/BP/c1-2 |
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| SMILES = |
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| StdInChIKey = FFBGYFUYJVKRNV-UHFFFAOYSA-N |
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| SMILES1 = . |
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| SMILES2 = B#P |
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}} |
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| Section2 = {{Chembox Properties |
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|Section2={{Chembox Properties |
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| Formula = BP |
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| Formula = BP |
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| MolarMass = 41.7855 g/mol |
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| MolarMass = 41.7855 g/mol |
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| Appearance = maroon powder |
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| Appearance = maroon powder |
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| Density = 2.90 g/cm<sup>3</sup> |
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| Density = 2.90 g/cm<sup>3</sup> |
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| MeltingPt = 1100 °C (decomposes) |
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| MeltingPtC = 1100 |
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| MeltingPt_notes = (decomposes) |
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| BoilingPt = |
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| Solubility = |
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| BoilingPt = |
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| Solubility = |
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| BandGap = 2 eV (indirect) |
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| BandGap = 2.1 eV (indirect, 300 K)<ref name=Madelung>{{cite book | author = Madelung, O. | title = Semiconductors: Data Handbook | year = 2004 | publisher = Birkhäuser | isbn = 978-3-540-40488-0 | pages = 84–86 | url = https://books.google.com/books?id=v_8sMfNAcA4C&pg=PA84 }}</ref> |
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| ElectronMobility = 5400 cm<sup>2</sup>/(V*s) (300 K) |
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| ThermalConductivity = 4 W/(cm*K) (300 K) |
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| ThermalConductivity = 4.6 W/(cm·K) (300 K)<ref name=bpthermal/> |
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| RefractIndex = 3.05 (0.63 µm)<ref></ref> |
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| RefractIndex = 3.0 (0.63 μm)<ref name=Madelung/> |
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| Section3 = {{Chembox Structure |
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|Section3={{Chembox Structure |
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| SpaceGroup = ''T''<sup>2</sup><sub>d</sub>-''F''-4''3m'' |
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| SpaceGroup = F{{overline|4}}3m |
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| CrystalStruct = ] |
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| CrystalStruct = ] |
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| Coordination = Tetrahedral |
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| Coordination = Tetrahedral |
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| Section7 = {{Chembox Hazards |
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|Section7={{Chembox Hazards |
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| MainHazards = |
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| MainHazards = |
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| FlashPt = |
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| FlashPt = |
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| Autoignition = |
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| AutoignitionPt = |
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'''Boron phosphide''' (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B<sub>12</sub>P<sub>2</sub>) is a chemical compound of ] and ]. It is a ].<ref>{{cite journal |author1=Popper, P. |author2=Ingles, T. A. | title = Boron Phosphide, a III–V Compound of Zinc-Blende Structure | journal = Nature | year = 1957 | volume = 179 |issue=4569 | page = 1075 | doi = 10.1038/1791075a0 |bibcode=1957Natur.179.1075P | doi-access = free }}</ref> |
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'''Boron phosphide''' (BP) is a chemical compound of ] and ]. It is a ] <ref>''Boron Phosphide, a III–V Compound of Zinc-Blende Structure'' P. Popper & T. A. Ingles Nature 179, 1075, 1957 {{doi|10.1038/1791075a0}}</ref>. |
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==History== |
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==History== |
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Crystals of boron phosphide have been synthesized by ] as early as in 1891 <ref>Moissan, H., Comp. Rend. 113 (1891) 726</ref>. |
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Crystals of boron phosphide were synthesized by ] as early as 1891.<ref>{{cite journal | author = Moissan, H. | title = Préparation et Propriétés des Phosphures de Bore | journal = Comptes Rendus | volume = 113 | year = 1891 | pages = 726–729 | url = http://visualiseur.bnf.fr/CadresFenetre?O=NUMM-3069&I=726&M=tdm }}</ref> |
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==Appearance== |
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==Appearance== |
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Pure BP is almost transparent, n-type crystals are orange-red whereas p-type ones are dark red <ref name=berger>L. I. Berger "Semiconductor materials" CRC Press, 1996 ISBN 0849389127, 9780849389122 (available on google books), p. 199</ref>. |
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Pure BP is almost transparent, n-type crystals are orange-red whereas p-type ones are dark red.<ref name=berger>{{cite book | author = Berger, L. I. | title = Semiconductor Materials | publisher = CRC Press | year = 1996 | isbn = 978-0-8493-8912-2 | url = https://archive.org/details/semiconductormat0000berg | url-access = registration | page = }}</ref> |
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==Chemical properties== |
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==Chemical properties== |
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BP is not attacked by acids or boiling aqueous alkali water solutions. It is only attacked by molten alkalis.<ref name=berger/>. |
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BP is not attacked by acids or boiling aqueous alkali water solutions. It is only attacked by molten alkalis.<ref name=berger/> |
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==Physical properties <ref name=berger/>== |
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==Physical properties== |
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BP is known to be chemically inert and exhibit very high thermal conductivity.<ref name=bpthermal>{{cite journal |author1=Kang, J. |author2=Wu, H. | author3=Hu, Y.| title = Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications | journal = Nano Letters| year = 2017 | volume = 17 |issue=12 |pages=7507–7514 | doi = 10.1021/acs.nanolett.7b03437 | pmid = 29115845 |bibcode=2017NanoL..17.7507K }}</ref> Some properties of BP are listed below: |
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*coefficient of thermal expansion ~3x10<sup>−6</sup> /°K |
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* lattice constant 0.45383 nm |
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*heat capacity C<sub>P</sub> ~ 0.8 J/(g*K) (300 K) |
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* coefficient of thermal expansion 3.65{{e|−6}} /°C (400 K) |
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*Debye temperature = 1000 K |
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* heat capacity C<sub>P</sub> ~ 0.8 J/(g·K) (300 K) |
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*relatively high microhardness of 32 GPa (100 g load). |
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* Debye temperature = 985 K |
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*electron and hole mobilities of few hundred cm<sup>2</sup>/(V*s) (up to 500) |
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* ] 152 GPa |
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* relatively high microhardness of 32 GPa (100 g load). |
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* electron and hole mobilities of a few hundred cm<sup>2</sup>/(V·s) (up to 500 for holes at 300 K) |
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* high thermal conductivity of ~ 460 W/(m·K) at room temperature<ref name=bpthermal/> |
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==See also== |
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==See also== |
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===Related materials=== |
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{{reflist}} |
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{{reflist}} |
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==Further reading== |
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* ''Boron Chemistry at the Millennium'', Editor: R.B. King, Elsevier Science & Technology (1999) ISBN 0-444-72006-5 |
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* {{cite book | title = Boron Chemistry at the Millennium | editor = King, R. B. | publisher = Elsevier Science & Technology | year = 1999 | isbn = 0-444-72006-5 }} |
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* P-n junction type boron phosphide-based semiconductor light-emitting device and production method thereof, United States Patent 6831304 |
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* {{cite patent | status = patent | title = P-N Junction Type Boron Phosphide-Based Semiconductor Light-Emitting Device and Production Method thereof | country = US | number = 6831304 | gdate = 2004-12-14 | assign1 = Showa Denko | inventor = Takashi, U. }} |
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* Semiconducting Properties of Cubic Boron Phosphide, B. Stone and D. Hill, Phys. Rev. Lett. vol. 4, 282–284 (1960) {{doi|10.1103/PhysRevLett.4.282}} |
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* {{cite journal | title = Semiconducting Properties of Cubic Boron Phosphide |author1=Stone, B. |author2=Hill, D. | journal = Physical Review Letters | year = 1960 | volume = 4 | issue = 6 | pages = 282–284 | doi = 10.1103/PhysRevLett.4.282 | bibcode = 1960PhRvL...4..282S }} |
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==External links== |
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{{Boron compounds}} |
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{{Boron compounds}} |
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{{Phosphorus compounds}} |
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{{Phosphides}} |
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{{DEFAULTSORT:Boron Phosphide}} |
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{{DEFAULTSORT:Boron Phosphide}} |
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