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Revision as of 06:48, 6 May 2011 editCheMoBot (talk | contribs)Bots141,565 edits Updating {{chembox}} (no changed fields - added verified revid - updated 'UNII_Ref', 'ChemSpiderID_Ref', 'StdInChI_Ref', 'StdInChIKey_Ref', 'ChEMBL_Ref', 'KEGG_Ref') per Chem/Drugbox validation (← Previous edit Latest revision as of 04:00, 23 November 2024 edit undoCitation bot (talk | contribs)Bots5,429,581 edits Removed parameters. | Use this bot. Report bugs. | Suggested by Graeme Bartlett | #UCB_toolbar 
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{{chembox {{chembox
| Watchedfields = changed
| verifiedrevid = 404109559 | verifiedrevid = 427708720
| ImageFile = Boron-phosphide-unit-cell-1963-CM-3D-balls.png | ImageFile = Boron-phosphide-unit-cell-1963-CM-3D-balls.png
| ImageSize = | ImageSize =
| IUPACName = | IUPACName =
| OtherNames = | OtherNames =
| Section1 = {{Chembox Identifiers |Section1={{Chembox Identifiers
| CASNo_Ref = {{cascite|correct|??}}
| CASNo = 20205-91-8 | CASNo = 20205-91-8
| ChemSpiderID = 79763
| EC_number = 243-593-3
| PubChem = 88409 | PubChem = 88409
| StdInChI=1S/BP/c1-2
| SMILES =
| StdInChIKey = FFBGYFUYJVKRNV-UHFFFAOYSA-N
| SMILES1 = .
| SMILES2 = B#P
}} }}
| Section2 = {{Chembox Properties |Section2={{Chembox Properties
| Formula = BP | Formula = BP
| MolarMass = 41.7855 g/mol | MolarMass = 41.7855 g/mol
| Appearance = maroon powder | Appearance = maroon powder
| Density = 2.90 g/cm<sup>3</sup> | Density = 2.90 g/cm<sup>3</sup>
| MeltingPt = 1100 °C (decomposes) | MeltingPtC = 1100
| MeltingPt_notes = (decomposes)
| BoilingPt =
| Solubility = | BoilingPt =
| Solubility =
| BandGap = 2 eV (indirect)
| BandGap = 2.1 eV (indirect, 300 K)<ref name=Madelung>{{cite book | author = Madelung, O. | title = Semiconductors: Data Handbook | year = 2004 | publisher = Birkhäuser | isbn = 978-3-540-40488-0 | pages = 84–86 | url = https://books.google.com/books?id=v_8sMfNAcA4C&pg=PA84 }}</ref>
| ElectronMobility = 5400 cm<sup>2</sup>/(V*s) (300 K)
| ThermalConductivity = 4 W/(cm*K) (300 K) | ThermalConductivity = 4.6 W/(cm·K) (300 K)<ref name=bpthermal/>
| RefractIndex = 3.05 (0.63 µm)<ref></ref> | RefractIndex = 3.0 (0.63 μm)<ref name=Madelung/>
}} }}
| Section3 = {{Chembox Structure |Section3={{Chembox Structure
| SpaceGroup = ''T''<sup>2</sup><sub>d</sub>-''F''-4''3m'' | SpaceGroup = F{{overline|4}}3m
| CrystalStruct = ] | CrystalStruct = ]
| Coordination = Tetrahedral | Coordination = Tetrahedral
}} }}
| Section7 = {{Chembox Hazards |Section7={{Chembox Hazards
| MainHazards = | MainHazards =
| FlashPt = | FlashPt =
| Autoignition = | AutoignitionPt =
}}
}} }}
'''Boron phosphide''' (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B<sub>12</sub>P<sub>2</sub>) is a chemical compound of ] and ]. It is a ].<ref>{{cite journal |author1=Popper, P. |author2=Ingles, T. A. | title = Boron Phosphide, a III–V Compound of Zinc-Blende Structure | journal = Nature | year = 1957 | volume = 179 |issue=4569 | page = 1075 | doi = 10.1038/1791075a0 |bibcode=1957Natur.179.1075P | doi-access = free }}</ref>
}}
'''Boron phosphide''' (BP) is a chemical compound of ] and ]. It is a ] <ref>''Boron Phosphide, a III–V Compound of Zinc-Blende Structure'' P. Popper & T. A. Ingles Nature 179, 1075, 1957 {{doi|10.1038/1791075a0}}</ref>.


==History== ==History==
Crystals of boron phosphide have been synthesized by ] as early as in 1891 <ref>Moissan, H., Comp. Rend. 113 (1891) 726</ref>. Crystals of boron phosphide were synthesized by ] as early as 1891.<ref>{{cite journal | author = Moissan, H. | title = Préparation et Propriétés des Phosphures de Bore | journal = Comptes Rendus | volume = 113 | year = 1891 | pages = 726–729 | url = http://visualiseur.bnf.fr/CadresFenetre?O=NUMM-3069&I=726&M=tdm }}</ref>


==Appearance== ==Appearance==
Pure BP is almost transparent, n-type crystals are orange-red whereas p-type ones are dark red <ref name=berger>L. I. Berger "Semiconductor materials" CRC Press, 1996 ISBN 0849389127, 9780849389122 (available on google books), p. 199</ref>. Pure BP is almost transparent, n-type crystals are orange-red whereas p-type ones are dark red.<ref name=berger>{{cite book | author = Berger, L. I. | title = Semiconductor Materials | publisher = CRC Press | year = 1996 | isbn = 978-0-8493-8912-2 | url = https://archive.org/details/semiconductormat0000berg | url-access = registration | page = }}</ref>


==Chemical properties== ==Chemical properties==
BP is not attacked by acids or boiling aqueous alkali water solutions. It is only attacked by molten alkalis.<ref name=berger/>. BP is not attacked by acids or boiling aqueous alkali water solutions. It is only attacked by molten alkalis.<ref name=berger/>


==Physical properties <ref name=berger/>== ==Physical properties==
BP is known to be chemically inert and exhibit very high thermal conductivity.<ref name=bpthermal>{{cite journal |author1=Kang, J. |author2=Wu, H. | author3=Hu, Y.| title = Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications | journal = Nano Letters| year = 2017 | volume = 17 |issue=12 |pages=7507–7514 | doi = 10.1021/acs.nanolett.7b03437 | pmid = 29115845 |bibcode=2017NanoL..17.7507K }}</ref> Some properties of BP are listed below:
*coefficient of thermal expansion ~3x10<sup>−6</sup> /°K
* lattice constant 0.45383&nbsp;nm
*heat capacity C<sub>P</sub> ~ 0.8 J/(g*K) (300 K)
* coefficient of thermal expansion 3.65{{e|−6}}C (400 K)
*Debye temperature = 1000 K
* heat capacity C<sub>P</sub> ~ 0.8 J/(g·K) (300 K)
*relatively high microhardness of 32 GPa (100 g load).
* Debye temperature = 985 K
*electron and hole mobilities of few hundred cm<sup>2</sup>/(V*s) (up to 500)
* ] 152 GPa
* relatively high microhardness of 32 GPa (100 g load).
* electron and hole mobilities of a few hundred cm<sup>2</sup>/(V·s) (up to 500 for holes at 300 K)
* high thermal conductivity of ~ 460 W/(m·K) at room temperature<ref name=bpthermal/>


==See also== ==See also==
===Related materials===
* ] * ]
* ] * ]
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{{reflist}} {{reflist}}


==Further reading==
* ''Boron Chemistry at the Millennium'', Editor: R.B. King, Elsevier Science & Technology (1999) ISBN 0-444-72006-5 * {{cite book | title = Boron Chemistry at the Millennium | editor = King, R. B. | publisher = Elsevier Science & Technology | year = 1999 | isbn = 0-444-72006-5 }}
* P-n junction type boron phosphide-based semiconductor light-emitting device and production method thereof, United States Patent 6831304
* {{cite patent | status = patent | title = P-N Junction Type Boron Phosphide-Based Semiconductor Light-Emitting Device and Production Method thereof | country = US | number = 6831304 | gdate = 2004-12-14 | assign1 = Showa Denko | inventor = Takashi, U. }}
* Semiconducting Properties of Cubic Boron Phosphide, B. Stone and D. Hill, Phys. Rev. Lett. vol. 4, 282–284 (1960) {{doi|10.1103/PhysRevLett.4.282}}
* {{cite journal | title = Semiconducting Properties of Cubic Boron Phosphide |author1=Stone, B. |author2=Hill, D. | journal = Physical Review Letters | year = 1960 | volume = 4 | issue = 6 | pages = 282–284 | doi = 10.1103/PhysRevLett.4.282 | bibcode = 1960PhRvL...4..282S }}

==External links==

{{Boron compounds}} {{Boron compounds}}
{{Phosphorus compounds}}
{{Phosphides}}


{{DEFAULTSORT:Boron Phosphide}} {{DEFAULTSORT:Boron Phosphide}}
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{{inorganic-compound-stub}} {{inorganic-compound-stub}}

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