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	<!-- {{redirect3|Hafnia|For the capital of Denmark, see ]}} -->
	{{chembox		{{chembox
			| Verifiedfields = changed
⚫	| verifiedrevid = 396491829
			| Watchedfields = changed
⚫	| ImageFile = Hafnium(IV) oxide.jpg
		⚫	| verifiedrevid = 407290892
⚫	| ImageSize = 200px
			| ImageFile = Kristallstruktur Zirconium(IV)-oxid.png
⚫	| ImageName = Hafnium(IV) oxide
		⚫	| ImageSize =
		⚫	| ImageName = Hafnium(IV) oxide structure
		⚫	| ImageFile1 = Hafnium(IV) oxide.jpg
			| ImageSize1 =
		⚫	| ImageName1 = Hafnium(IV) oxide
	| IUPACName = Hafnium(IV) oxide		| IUPACName = Hafnium(IV) oxide
	| OtherNames = Hafnium dioxide<br/>Hafnia		| OtherNames = Hafnium dioxide<br/>Hafnia
	| Section1 = {{Chembox Identifiers		|Section1={{Chembox Identifiers
			| CASNo = 12055-23-1
⚫	| ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}}
		⚫	| CASNo_Ref = {{cascite|correct|CAS}}
		⚫	| ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}}
	| ChemSpiderID = 258363		| ChemSpiderID = 258363
			| EC_number = 235-013-2
			| UNII_Ref = {{fdacite|correct|FDA}}
			| UNII = 3C4Z4KG52T
		⚫	| PubChem = 292779
	| SMILES = O==O		| SMILES = O==O
	| InChIKey = CJNBYAVZURUTKZ-MSHMTBKAAI		| InChIKey = CJNBYAVZURUTKZ-MSHMTBKAAI
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	| StdInChIKey_Ref = {{stdinchicite|correct|chemspider}}		| StdInChIKey_Ref = {{stdinchicite|correct|chemspider}}
	| StdInChIKey = CJNBYAVZURUTKZ-UHFFFAOYSA-N		| StdInChIKey = CJNBYAVZURUTKZ-UHFFFAOYSA-N
	| CASNo = 12055-23-1		| InChI = 1/Hf.2O/rHfO2/c2-1-3
⚫	| CASNo_Ref = {{cascite|correct|CAS}}
	| EINECS =
⚫	| PubChem =
	| InChI = 1/Hf.2O/rHfO2/c2-1-3
	| RTECS =
	}}		}}
	| Section2 = {{Chembox Properties		|Section2={{Chembox Properties
	| Formula = HfO<sub>2</sub>		| Formula = HfO<sub>2</sub>
	| MolarMass = 210.49 g/mol		| MolarMass = 210.49 g/mol
	| Appearance = off-white powder		| Appearance = off-white powder
	| Density = 9.68 g/cm<sup>3</sup>, solid		| Density = 9.68 g/cm<sup>3</sup>, solid
	| MeltingPt = 2758 °C		| MeltingPtC = 2758
	| BoilingPt = 5400 °C		| BoilingPtC = 5400
	| Solubility = insoluble		| Solubility = insoluble
	| SolubleOther =		| SolubleOther =
	| Solvent =		| Solvent =
	| pKa =		| pKa =
	| pKb =		| pKb =
			| MagSus = &minus;23.0·10<sup>−6</sup> cm<sup>3</sup>/mol
	}}		}}
	| Section7 = {{Chembox Hazards		|Section4={{Chembox Thermochemistry
			| DeltaHf = –1117 kJ/mol<ref>{{cite journal | doi=10.1016/0021-9614(75)90076-2 | title=The enthalpy of formation of hafnium dioxide | date=1975 | last1=Kornilov | first1=A.N. | last2=Ushakova | first2=I.M. | last3=Huber | first3=E.J. | last4=Holley | first4=C.E. | journal=The Journal of Chemical Thermodynamics | volume=7 | pages=21–26 }}</ref>
	| ExternalMSDS =
	| EUIndex = Not listed		| Entropy =
			}}
	| EUClass =
			|Section7={{Chembox Hazards
	| MainHazards =
	| RPhrases =		| ExternalSDS =
	| SPhrases =		| MainHazards =
	| NFPA-H =		| NFPA-H =
	| NFPA-F =		| NFPA-F =
	| NFPA-R =		| NFPA-R =
	| NFPA-O =		| NFPA-S =
	| FlashPt = Non-flammable		| FlashPt = Non-flammable
	| PEL =		| PEL =
	}}		}}
	| Section8 = {{Chembox Related		|Section8={{Chembox Related
	| OtherAnions =		| OtherAnions =
	| OtherCations = ]<br/>]		| OtherCations = ]<br/>]
	| OtherCpds = ]		| OtherCompounds = ]
	}}		}}
	}}		}}
	'''Hafnium(IV) oxide''' is the ] with the ] ]]<sub>2</sub>. Also known as '''hafnia''', this colourless solid is one of the most common and stable compounds of ]. It is an electrical insulator with a ] of approximately 6 ]. Hafnium dioxide is an intermediate in some processes that give hafnium metal.		'''Hafnium(IV) oxide''' is the ] with the ] {{chem|Hf|O|2}}. Also known as '''hafnium dioxide''' or '''hafnia''', this colourless solid is one of the most common and stable compounds of ]. It is an electrical insulator with a ] of 5.3~5.7 ].<ref>{{cite journal |last=Bersch |first=Eric|title=Band offsets of ultrathin high-k oxide films with Si |journal=Phys. Rev. B |volume=78 |issue=8|page=085114 |doi=10.1103/PhysRevB.78.085114|display-authors=etal |year=2008|bibcode=2008PhRvB..78h5114B}}</ref> Hafnium dioxide is an intermediate in some processes that give hafnium metal.
	Hafnium(IV) oxide is quite inert. It reacts with strong ]s such as concentrated ] and with strong ]s. It dissolves slowly in ] to give fluorohafnate anions. At elevated temperatures, it reacts with ] in the presence of ] or ] to give ].		Hafnium(IV) oxide is quite inert. It reacts with strong ]s such as concentrated ] and with strong ]s. It dissolves slowly in ] to give fluorohafnate anions. At elevated temperatures, it reacts with ] in the presence of ] or ] to give ].
			==Structure==
			Hafnia typically adopts the same structure as ] (ZrO<sub>2</sub>). Unlike ], which features six-coordinate Ti in all phases, zirconia and hafnia consist of seven-coordinate metal centres. A variety of other crystalline phases have been experimentally observed, including cubic ] (Fm{{overline|3}}m), tetragonal (P4<sub>2</sub>/nmc), monoclinic (P2<sub>1</sub>/c) and orthorhombic (Pbca and Pnma).<ref>{{cite journal|at=Table&nbsp;III |author=V. Miikkulainen|display-authors=etal|year=2013 |journal=] |title=Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends |volume=113 |issue= 2 |doi=10.1063/1.4757907 |bibcode=2013JAP...113b1301M}}</ref> It is also known that hafnia may adopt two other orthorhombic metastable phases (space group Pca2<sub>1</sub> and Pmn2<sub>1</sub>) over a wide range of pressures and temperatures,<ref>{{cite journal |author1=T. D. Huan |author2=V. Sharma |author3=G. A. Rossetti, Jr. |author4=R. Ramprasad |year=2014 |journal=] |title=Pathways towards ferroelectricity in hafnia |volume=90 |issue=6 |page=064111 |doi=10.1103/PhysRevB.90.064111|arxiv=1407.1008 |bibcode=2014PhRvB..90f4111H |s2cid=53347579 }}</ref> presumably being the sources of the ferroelectricity observed in thin films of hafnia.<ref>{{cite journal |author= T. S. Boscke |year=2011 |journal=] |title=Ferroelectricity in hafnium oxide thin films |volume=99 |issue=10 |page=102903 |doi=10.1063/1.3634052|bibcode=2011ApPhL..99j2903B}}</ref>
			Thin films of hafnium oxides deposited by ] are usually crystalline. Because ] devices benefit from having amorphous films present, researchers have alloyed hafnium oxide with aluminum or silicon (forming ]s), which have a higher crystallization temperature than hafnium oxide.<ref>{{cite journal |author=J.H. Choi|year=2011 |journal=Materials Science and Engineering: R |title=Development of hafnium based high-k materials—A review |volume=72 |issue=6 |pages=97–136 |doi=10.1016/j.mser.2010.12.001 |display-authors=etal}}</ref>
	==Applications==		==Applications==
	Hafnia is used in ]s, and as a ] ] in ] capacitors. Hafnium-based oxides are currently leading candidates to replace ] as a gate insulator in ]. The advantage for transistors is its high ]: The dielectric constant of HfO<sub>2</sub> is 25, whereas the dielectric constant of SiO<sub>2</sub> is only 3.9.<ref> by Wilk ''et al.'' in the ], Table 1</ref>		Hafnia is used in ]s, and as a ] in ] capacitors and in advanced ] devices.<ref>{{cite journal |author1=H. Zhu |author2=C. Tang |author3=L. R. C. Fonseca |author4=R. Ramprasad |year=2012 |journal=] |title=Recent progress in ab initio simulations of hafnia-based gate stacks |volume=47 |issue=21 |pages=7399–7416 |doi= 10.1007/s10853-012-6568-y|bibcode=2012JMatS..47.7399Z |s2cid=7806254 }}</ref> Hafnium-based oxides were introduced by ] in 2007 as a replacement for ] as a gate insulator in ].<ref>{{cite web |author=Intel|title=Intel's Fundamental Advance in Transistor Design Extends Moore's Law, Computing Performance |url=https://www.intel.com/pressroom/archive/releases/2007/20071111comp.htm |date = 11 November 2007 |author-link=Intel Corporation }}</ref> The advantage for transistors is its high ]: the dielectric constant of HfO<sub>2</sub> is 4–6 times higher than that of SiO<sub>2</sub>.<ref>{{cite journal|doi=10.1063/1.1361065 | volume=89 | issue=10 | title=High-κ gate dielectrics: Current status and materials properties considerations | year=2001 | journal=Journal of Applied Physics | pages=5243–5275 | author1=G. D. Wilk | author2=R. M. Wallace | author3=J. M. Anthony | bibcode=2001JAP....89.5243W }}, Table 1</ref> The dielectric constant and other properties depend on the deposition method, composition and microstructure of the material.
			Hafnium oxide (as well as doped and oxygen-deficient hafnium oxide) attracts additional interest as a possible candidate for resistive-switching memories<ref>{{cite journal |author=K.-L. Lin|year=2011 |journal=] |title=Electrode dependence of filament formation in HfO2 resistive-switching memory |volume=109 |issue=8 |pages=084104–084104–7 |doi=10.1063/1.3567915 |display-authors=etal|bibcode=2011JAP...109h4104L}}</ref> and CMOS-compatible ferroelectric field effect transistors (]) and memory chips.<ref>{{cite web |author=Imec|title=Imec demonstrates breakthrough in CMOS-compatible Ferroelectric Memory |url=https://www.imec-int.com/en/articles/imec-demonstrates-breakthrough-in-cmos-compatible-ferroelectric-memory |date = 7 June 2017 |author-link=Imec }}</ref><ref>{{cite web |author=The Ferroelectric Memory Company|title=World's first FeFET-based 3D NAND demonstration |url=https://ferroelectric-memory.com/2017/06/08/worlds-first-fefet-based-3d-nand-demonstration/ |date = 8 June 2017 }}</ref><ref name=HAF1>{{cite book|author=T. S. Böscke |author2=J. Müller |author3=D. Bräuhaus |title=2011 International Electron Devices Meeting |chapter=Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors |publisher=IEEE |doi=10.1109/IEDM.2011.6131606 |pages=24.5.1–24.5.4 |date=7 Dec 2011 |isbn=978-1-4577-0505-2 }}</ref><ref name=HFO1>{{Cite book|title=Mit HFO2 voll CMOS-kompatibel|author=Nivole Ahner |publisher=Elektronik Industrie| date=August 2018|language=de}}</ref>
⚫	Because of its very high melting point, hafnia is also used as a refractory material in the insulation of such devices as ]s, where it can operate at temperatures up to 2500 °C.<ref>, Omega Engineering, Inc., retrieved 2008-12-03</ref>
		⚫	Because of its very high melting point, hafnia is also used as a refractory material in the insulation of such devices as ]s, where it can operate at temperatures up to 2500&nbsp;°C.<ref>, Omega Engineering, Inc., retrieved 2008-12-03</ref>
	Hafnium Oxide is applied to ]-based Non-Volatile RAM (]), where it replaces ] as the insulating layer. This switch in material decreased the amount of time to access the memory from several milliseconds to just around 100 nanoseconds thereby potentially increasing the reading and writing to NVRAM by a factor of 100,000.<ref>, Article written 05 February 2009 by David Robson </ref>
			Multilayered films of hafnium dioxide, silica, and other materials have been developed for use in ] of buildings. The films reflect sunlight and radiate heat at wavelengths that pass through Earth's atmosphere, and can have temperatures several degrees cooler than surrounding materials under the same conditions.<ref>{{Cite web|title = Aaswath Raman {{!}} Innovators Under 35 {{!}} MIT Technology Review|url = http://www.technologyreview.com/lists/innovators-under-35/2015/pioneer/aaswath-raman/|access-date = 2015-09-02|date = August 2015}}</ref>
	==References==		==References==
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			{{Oxides}}
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