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Revision as of 20:19, 22 August 2011 editCheMoBot (talk | contribs)Bots141,565 edits Updating {{chembox}} (no changed fields - added verified revid - updated 'ChemSpiderID_Ref', 'DrugBank_Ref', 'UNII_Ref', 'ChEMBL_Ref', 'ChEBI_Ref', 'KEGG_Ref', 'StdInChI_Ref', 'StdInChIKey_Ref', 'ChEBI_Ref') per [[Misplaced Pages:WikiProject Chemicals/Chem← Previous edit		Latest revision as of 00:21, 17 March 2024 edit undoEHz (talk | contribs)151 editsm Element names are not normally capitalized (corrected 2), °C with space (corrected 1).
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	{{chembox		{{chembox
			| Verifiedfields = changed
⚫	| verifiedrevid = 385200024
			| Watchedfields = changed
		⚫	| verifiedrevid = 446205885
	| ImageFile = TaNstructure.jpg		| ImageFile = TaNstructure.jpg
	| ImageFile2 = TaNstructure2.jpg		| ImageFile2 = TaNstructure2.jpg
	| ImageName =		| ImageName =
	| IUPACName =		| IUPACName =
	| OtherNames = Tantalum mononitride		| OtherNames = Tantalum mononitride
	| Section1 = {{Chembox Identifiers		|Section1={{Chembox Identifiers
		⚫	| CASNo_Ref = {{cascite|correct|CAS}}
	| CASNo = 12033-62-4		| CASNo = 12033-62-4
⚫	| CASNo_Ref = {{cascite}}
			| PubChem = 82832
			| EINECS = 234-788-4
			| InChI = 1S/N.Ta
			| SMILES = N#
	}}		}}
	| Section2 = {{Chembox Properties		|Section2={{Chembox Properties
	| Formula = TaN		| Formula = TaN
	| MolarMass = 194.95 g/mol		| MolarMass = 194.955 g/mol
	| Appearance = black crystals		| Appearance = black crystals
	| Density = 13.7 g/cm<sup>3</sup>, solid		| Density = 14.3 g/cm<sup>3</sup>
	| MeltingPt = 3090 °C		| MeltingPtC = 3090
	| BoilingPt =		| BoilingPt =
	| Solubility =		| Solubility = insoluble
	}}		}}
	| Section3 = {{Chembox Structure		|Section3={{Chembox Structure
	| CrystalStruct = Hexagonal, ]		| CrystalStruct = Hexagonal, ]
	| SpaceGroup = P-62m, No. 189		| SpaceGroup = P-62m, No. 189
	}}		}}
	| Section7 = {{Chembox Hazards		|Section7={{Chembox Hazards
	| ExternalMSDS =		| ExternalSDS =
	| EUIndex = Not listed		| HPhrases =
	| EUClass =		| PPhrases =
	| RPhrases =		| GHS_ref =
	| SPhrases =		| MainHazards =
	| MainHazards =		| NFPA-H =
	| NFPA-H =		| NFPA-F =
	| NFPA-F =		| NFPA-R =
	| NFPA-R =		| NFPA-S =
		⚫	| FlashPt = Non-flammable
	| NFPA-O =
⚫	| FlashPt = Non-flammable
	}}		}}
	| Section8 = {{Chembox Other		|Section8={{Chembox Related
	| OtherAnions =		| OtherAnions =
	| OtherCations = ]<br/>]		| OtherCations = ]<br/>]
	}}		}}
	}}		}}
			'''Tantalum nitride''' (TaN) is a ], a ] of ]. There are multiple phases of compounds, stoichimetrically from Ta<sub>2</sub>N to Ta<sub>3</sub>N<sub>5</sub>, including TaN.
	'''Tantalum nitride''' (]]) is an ] ]. It is sometimes used to create barrier or "glue" layers between ], or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of ] wafers during the manufacture of ]s, to create ] ] ]s and has other electronic applications.<ref>{{cite web | url=http://www2.iee.or.jp/ver2/honbu/14-magazine/log/2005/2005_04e_05.pdf |title=Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance |last =Akashi |first =Teruhisa |accessdate =2006-09-02 | year=2005 }}</ref>
			As a thin film TaN find use as a diffusion barrier and insulating layer between copper interconnects in the ] of computer chips. Tantalum nitrides are also used in thin film resistors.
			==Phase diagram==
			The tantalum - ] system includes several states including a nitrogen ] in Tantalum, as well as several nitride phases, which can vary from expected stoichiometry due to lattice vacancies.<ref name=inna>{{Cite encyclopedia|encyclopedia = Concise Encyclopedia of Self-Propagating High-Temperature Synthesis - History, Theory, Technology, and Products | year = 2017 | pages = 370–371 | chapter = Tantalum Nitride | first = Inna P. | last = Borovinskaya| doi = 10.1016/B978-0-12-804173-4.00150-2 | isbn = 9780128041734 }}</ref> Annealing of nitrogen rich "TaN" can result in conversion to a two phase mixture of TaN and Ta<sub>5</sub>N<sub>6</sub>.<ref name=inna/>
			Ta<sub>5</sub>N<sub>6</sub> is thought to be the more thermally stable compound - though it decomposes in vacuum at 2500 °C to Ta<sub>2</sub>N.<ref name=inna/> It was reported the decomposition in vacuum from Ta<sub>3</sub>N<sub>5</sub> via Ta<sub>4</sub>N<sub>5</sub>, Ta<sub>5</sub>N<sub>6</sub>, ε-TaN, to Ta<sub>2</sub>N.<ref name=terao>{{citation|title = Structure of Tantalum Nitrides | first = Nobuzo | last = Terao | year =1971 | journal = Japanese Journal of Applied Physics | volume = 10 | pages = 248–259 | number = 2 | doi = 10.1143/JJAP.10.248 | bibcode = 1971JaJAP..10..248T | s2cid = 122356023 }}</ref>
			==Preparation==
			TaN is often prepared as thin films. Methods of depositing the films include RF-magnetron-reactive sputtering,<ref name=akashi/><ref name=zaman>{{citation| title = Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering | first1 = Anna | last1 = Zaman| first2 = Efstathios I. | last2 = Meletis |date = 23 November 2017 | journal = Coatings| doi = 10.3390/coatings7120209 | volume = 7 | issue = 12 | pages = 209 | doi-access = free }}</ref> Direct current (DC) ],<ref name=lima>{{citation| title = Tantalum Nitride as Promising Gate Electrode for MOS Technology | first1 = Lucas | last1 = Lima | first2 = Milena D. | last2 =Moreiraa | first3 = Fred | last3 =Cioldin | first4 = José Alexandre | last4 = Diniza | first5 = Ioshiaki | last5 = Doi | doi = 10.1149/1.3474175| journal = ECS Trans. |year=2010 | volume = 31 | issue = 1|pages= 319–325| bibcode = 2010ECSTr..31a.319L | s2cid = 97901262 }}</ref> ] (SHS) via 'combustion' of tantalum powder in nitrogen,<ref name=inna/> low‐pressure ] (LP‐MOCVD),<ref name=tsai>{{citation|title= Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallization | journal = Appl. Phys. Lett. | volume = 67| issue = 8 | page = 1128 | year = 1995| doi = 10.1063/1.114983 | first1 = M. H.|last1 = Tsai |first2= S. C.| last2 = Sun | bibcode = 1995ApPhL..67.1128T }}</ref> ] (IBAD),<ref name=baba>{{citation| journal = Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | volume = 127–128| date = 2 May 1997 | pages = 841–845 | title = Structure and properties of NbN and TaN films prepared by ion beam assisted deposition | first1 = K. |last1 = Baba | first2 = R.| last2 = Hatada | first3= K.|last3 = Udoh | first4 = K. | last4 = Yasuda | doi = 10.1016/S0168-583X(97)00018-9 | bibcode = 1997NIMPB.127..841B}}</ref> and by ] of tantalum in concert with high energy nitrogen ions.<ref name=ensinger>{{citation | title = Low-temperature formation of metastable cubic tantalum nitride by metal condensation under ion irradiation | journal = Journal of Applied Physics | volume = 77 | issue = 12 | page = 6630 | year = 1995 | doi = 10.1063/1.359073 | first1 = W. | last1 = Ensinger| first2 = M. | last2 = Kiuchi | first3 = M. | last3 = Satou | bibcode = 1995JAP....77.6630E }}</ref>
			Depending on the relative amount of N<sub>2</sub>, the deposited film can vary from (fcc) TaN to (hexagonal) Ta<sub>2</sub>N as nitrogen decreases.<ref name="zaman"/> A variety of other phases have also been reported from deposition including bcc and hexagonal TaN; hexagonal Ta<sub>5</sub>N<sub>6</sub>; tetragonal Ta<sub>4</sub>N<sub>5</sub>; orthorhombic Ta<sub>6</sub>N<sub>2.5</sub>, Ta<sub>4</sub>N, or Ta<sub>3</sub>N<sub>5</sub>.<ref name="zaman"/> The electrical properties of TaN films vary from metallic conductor to insulator depending on the relative nitrogen ratio, with N rich films being more resistive.<ref name=kim>{{citation| title =Electrical and mechanical properties of tantalum nitride thin films deposited by reactive sputtering | journal = Journal of Crystal Growth | volume = 283 |issue = 3–4 | pages = 404–408 | date = October 2005 | doi = 10.1016/j.jcrysgro.2005.06.017 | first1 = Deok-kee | last1 = Kim | first2 = Heon | last2 = Lee | first3 = Donghwan | last3 = Kim | first4 = Young Keun | last4 = Kim | bibcode = 2005JCrGr.283..404K }}</ref>
			==Uses==
			It is sometimes used in ] manufacture to create a diffusion barrier or "glue" layers between ], or other conductive metals. In the case of ] processing (at c. 20 ]), copper is first coated with tantalum, then with TaN using ] (PVD); this barrier coated copper is then coated with more copper by PVD, and infilled with electrolytically coated copper, before being mechanically processed (grind/polishing).<ref>{{citation| url = https://semiengineering.com/challenges-mount-for-interconnect/ |first = Mark | last = LaPedus | title = Challenges Mount For Interconnect | date =26 June 2012 | work = semiengineering.com }}</ref>
			It also has application in thin film ]s.<ref name = akashi>{{citation | doi = 10.1541/ieejsmas.125.182 |title=Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance |last =Akashi |first =Teruhisa | year=2005 |journal = IEEJ Transactions on Sensors and Micromachines | volume = 125 | issue = 4 | pages = 182–187 | bibcode = 2005IJTSM.125..182A | doi-access = free }}</ref> It has the advantage over ] resistors of forming a ] oxide film which is resistant to moisture.<ref>{{citation| at= § 2.5 Characteristics of Tantalum Nitride Resistors, pp.83-4 | title = Hybrid Microcircuit technology Handbook| edition = 2nd |first1 = James J. | last1 = Licari | first2= Leonard R. |last2 = Enlow | publisher = Noyes Publications | year = 1998 }}</ref>
	==References==		==References==
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	{{Tantalum compounds}}		{{Tantalum compounds}}
			{{Nitrides}}
	]		]
	]		]
	]
	{{inorganic-compound-stub}}
	]
	]