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Crossbar, Inc.

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This article is about the semiconductor company. For other uses, see Crossbar.
Crossbar, Inc.
Company typePrivately held
IndustrySemiconductors: memory
Founded2010
FounderGeorge Minassian, Hagop Nazarian, Wei Lu
HeadquartersSanta Clara, California
ProductsSemiconductor Memory Technology
Number of employees20+

Crossbar is a company based in Santa Clara, California. Crossbar develops a class of non-volatile resistive random-access memory (RRAM) technology.

History

Crossbar was founded in 2010, by George Minassian, Hagop Nazarian, and Wei Lu. As part of the University of Michigan Tech Transfer program, in 2010, Crossbar licensed resistive RAM (RRAM) patents from the University of Michigan. Crossbar filed patents relating to the development, commercialization and manufacturing of RRAM technology.

In August 2013, Crossbar emerged from stealth mode and announced the development of a memory array at a commercial semiconductor device fabrication facility. It was said to deliver faster write performance; lower power consumption and more endurance at half the die size, compared to NAND flash memory. Since it is CMOS-compatible, it can be fabricated without special equipment or materials.

Crossbar received $25 million in funding from Artiman Ventures, Kleiner Perkins Caufield and Byers, Northern Light Venture Capital and the Michigan Investment in New Technology Startups (MINTS) program in 2012. Another funding round of about $35 million was announced in September 2015, with investors from China and Hong Kong.

Crossbar primarily markets to original equipment manufacturers (OEMs) and system on a chip (SOC) developers of consumer, enterprise, mobile, industrial and Internet of things products.

Products

The company in 2013 announced its goal was a terabyte of storage on a single RRAM integrated circuit, compatible with standard CMOS semiconductor manufacturing processes, with a prototype showcased the same year having the theoretical ability to achieve this on a 200mm chip. According to Crossbar, the chip uses a crosspoint array to stack multiple silver-ion-based memory layers on top of each other, with the prototype having three such layers.

See also

References

  1. ^ "From D: Notice of Exempt Offering of Securities". United States Securities and Exchange Commission. November 20, 2012. Retrieved March 31, 2017.
  2. Clark, Don. "Crossbar Enters Race to Change Memory Chips". blogs.wsj.com The Wall Street Journal. Retrieved 5 August 2013.
  3. Shah, Agam. "Startup Crossbar pits RRAM against DRAM and flash storage". CIO.com. Retrieved 5 August 2013.
  4. Moore, Nicole. "Faster, more powerful mobile devices: U-M startup Crossbar could disrupt the memory market]". ns.umich.edu. Retrieved 5 August 2013.
  5. Cole, Bernard. "Startup wants to replace NAND and DRAM with silver RRAMs". embedded.com. Retrieved 5 August 2013.
  6. Harris, Robin. "Flash successor announced". ZDNet. Retrieved 5 August 2013.
  7. Tom Simonite (August 14, 2013). "Denser, Faster Memory Challenges Both DRAM and Flash". MIT Technology Review. Retrieved March 31, 2017.
  8. Chris Mellor (September 18, 2015). "D-round VC ReRAM cash comes crashing down on Crossbar: Close, so close to getting its ReRAM afloat before Intel and Micron barge in". The Register. Retrieved March 31, 2017.
  9. Takahasi, Dean. "Crossbar says it will kill the $60B flash memory market with Resistive RAM, which stores a terabyte on a chip". venturebeat.com. Retrieved 5 August 2013.
  10. Poeter, Damion. "Startup's 'RRAM' Tech Promises 1TB Memory for Mobile Devices". PCMagazine.com. Retrieved 5 August 2013.
  11. "Crossbar RRAM Aims for 1TB". eetimes.com. 2014-07-01. Retrieved 2024-07-10.
  12. "Crossbar Emerges From Stealth, Packing 1TB Into a Single Chip update from August 2013". itprotoday.com. 2013-08-06. Retrieved 2024-07-10.
  13. "Crossbar unveils resistive RAM with simple, three-layer structure". semiconductor-digest.com. Retrieved 2024-07-10.
  14. "ReRAM Startup Bets on Silver". eetime.com. 2013-08-05. Retrieved 2024-07-10.

External links

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