Misplaced Pages

Revision as of 23:51, 29 December 2011

Boron Arsenide

Identifiers
CAS Number	12005-69-5
Properties
Chemical formula	BAs or B12As2
Molar mass	85.733 g/mol
Density	5.22 g/cm, solid
Melting point	2,027 °C (3,681 °F; 2,300 K)
Solubility in water	Insoluble
Band gap	1.50 eV(BAs); 3.47 eV(B12As2)
Related compounds
Other anions	Boron nitride Boron phosphide Boron antimonide
Other cations	Aluminium arsenide Gallium arsenide Indium arsenide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C , 100 kPa). Y verify (what is  ?) Infobox references

Boron arsenide is a chemical compound of boron and arsenic. It is a cubic (sphalerite) semiconductor with a lattice constant of 0.4777 nm and an indirect bandgap of roughly 1.5 eV. It can be alloyed with gallium arsenide.

Boron arsenide also occurs as an icosahedral boride, B₁₂As₂. It belongs to R-3m space group with a rhombohedral structure based on clusters of boron atoms and two-atom As-As chains. It's a wide bandgap semiconductor (3.47 eV) with the extraordinary ability to “self-heal” radiation damage. This form can be grown on substrates such as silicon carbide.

Applications

Solar cells can be fabricated from boron arsenide. It's also an attractive choice for devices exposed to radiation which can severely degrade the electrical properties of conventional semiconductors, causing devices to cease functioning. Among the particularly intriguing possible applications for B₁₂As₂ are beta cells, devices capable of producing electrical energy by coupling a radioactive beta emitter to a semiconductor junction, another space electronics.

References

1. http://spectra.phy.bris.ac.uk/research_semiconductor.asp

• Chen, H.; Wang, Guan; Dudley, Michael; Xu, Zhou; Edgar, J. H.; Batten, Tim; Kuball, Martin; Zhang, Lihua; Zhu, Yimei; et al. (2008). "Single-crystalline B₁₂As₂ on m-plane (1-100)15R-SiC". Applied Physics Letters. 92 (23): 231917–1--231917–3. doi:10.1063/1.2945635. {{cite journal}}: Cite has empty unknown parameters: |month= and |coauthors= (help); Explicit use of et al. in: |first= (help)
• Hart, Gus L. W. (2000). "Electronic structure of BAs and boride III-V alloys". Physical Review B. 62 (20): 13522–13537. arXiv:cond-mat/0009063. doi:10.1103/PhysRevB.62.13522. {{cite journal}}: Cite has empty unknown parameter: |month= (help); Unknown parameter |coauthors= ignored (|author= suggested) (help)
• King, R. Bruce (1999). Boron Chemistry at the Millennium. New York: Elsevier. ISBN 0444720065. {{cite book}}: Cite has empty unknown parameter: |coauthors= (help)
• Ownby, P. D. (1975). "Ordered Boron Arsenide". Journal of the American Ceramic Society. 58 (7–8): 359–360. doi:10.1111/j.1151-2916.1975.tb11514.x. {{cite journal}}: Cite has empty unknown parameters: |month= and |coauthors= (help)

External links

• Fiz Chemie Berlin thermophysical database entry
• Matweb data

• Boron compounds
• Arsenides
• III-V compounds
• Semiconductor materials