Boron phosphide

Boron phosphide
Identifiers

CAS Number	20205-91-8
3D model (JSmol)	Interactive image Interactive image
ChemSpider	79763
ECHA InfoCard	100.039.616
EC Number	243-593-3
PubChem CID	88409
CompTox Dashboard (EPA)	DTXSID1066570
InChI InChI=1S/BP/c1-2Key: FFBGYFUYJVKRNV-UHFFFAOYSA-N
SMILES . B#P
Properties
Chemical formula	BP
Molar mass	41.7855 g/mol
Appearance	maroon powder
Density	2.90 g/cm
Melting point	1,100 °C (2,010 °F; 1,370 K) (decomposes)
Band gap	2.1 eV (indirect, 300 K)
Thermal conductivity	4.6 W/(cm·K) (300 K)
Refractive index (n_D)	3.0 (0.63 μm)
Structure
Crystal structure	Zinc blende
Space group	F43m
Coordination geometry	Tetrahedral
Except where otherwise noted, data are given for materials in their standard state (at 25 °C , 100 kPa). Y verify (what is ?) Infobox references

Chemical compound

Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B₁₂P₂) is a chemical compound of boron and phosphorus. It is a semiconductor.

History

Crystals of boron phosphide were synthesized by Henri Moissan as early as 1891.

Appearance

Pure BP is almost transparent, n-type crystals are orange-red whereas p-type ones are dark red.

Chemical properties

BP is not attacked by acids or boiling aqueous alkali water solutions. It is only attacked by molten alkalis.

Physical properties

BP is known to be chemically inert and exhibit very high thermal conductivity. Some properties of BP are listed below:

lattice constant 0.45383 nm
coefficient of thermal expansion 3.65×10 /°C (400 K)
heat capacity C_P ~ 0.8 J/(g·K) (300 K)
Debye temperature = 985 K
Bulk modulus 152 GPa
relatively high microhardness of 32 GPa (100 g load).
electron and hole mobilities of a few hundred cm/(V·s) (up to 500 for holes at 300 K)
high thermal conductivity of ~ 460 W/(m·K) at room temperature

References

^ Madelung, O. (2004). Semiconductors: Data Handbook. Birkhäuser. pp. 84–86. ISBN 978-3-540-40488-0.
^ Kang, J.; Wu, H.; Hu, Y. (2017). "Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications". Nano Letters. 17 (12): 7507–7514. Bibcode:2017NanoL..17.7507K. doi:10.1021/acs.nanolett.7b03437. PMID 29115845.
Popper, P.; Ingles, T. A. (1957). "Boron Phosphide, a III–V Compound of Zinc-Blende Structure". Nature. 179 (4569): 1075. Bibcode:1957Natur.179.1075P. doi:10.1038/1791075a0.
Moissan, H. (1891). "Préparation et Propriétés des Phosphures de Bore". Comptes Rendus. 113: 726–729.
^ Berger, L. I. (1996). Semiconductor Materials. CRC Press. p. 116. ISBN 978-0-8493-8912-2.

King, R. B., ed. (1999). Boron Chemistry at the Millennium. Elsevier Science & Technology. ISBN 0-444-72006-5.
US patent 6831304, Takashi, U., "P-N Junction Type Boron Phosphide-Based Semiconductor Light-Emitting Device and Production Method thereof", issued 2004-12-14, assigned to Showa Denko
Stone, B.; Hill, D. (1960). "Semiconducting Properties of Cubic Boron Phosphide". Physical Review Letters. 4 (6): 282–284. Bibcode:1960PhRvL...4..282S. doi:10.1103/PhysRevLett.4.282.

v t e Boron compounds
Boron pnictogenides	BAs BN BP
Boron halides	BBr₃ BCl₃ BF BFO BF₃ BI₃ B₂F₄ B₂Cl₄
Acids	B(NO₃)₃ B(OH)₃ BPO₄ BH₃O
Boranes	BH₃ B₂H₄ B₂H₆ BH₃NH₃ B₄H₁₀ B₅H₉ B₅H₁₁ B₆H₁₀ B₆H₁₂ B₁₀H₁₄ B₁₈H₂₂
Boron oxides and sulfides	B₂O B₂O₃ B₂S₃ B₆O
Carbides	B₄C
Organoboron compounds	(BH₂Me)₂ BMe₃ BEt₃ Ac₄(BO₃)₂ COBH₃

v t e Phosphorus compounds
Phosphides	AlP AsP BP BiP Cs₂P₅ Ca₃P₂ Cd₃P₂ Cu₃P DyP ErP EuP GdP AuP FeP Fe₃P HfP HoP InP LaP Li₃P LuP MoP MoP₂ Mo₃P NbP NdP NpP Np₃P₄ OsP₂ Ru₂P PtP₂ PrP PrP₅ PuP ScP SmP SmP₅ Sr₃P₂ TbP SnP₃ ThP₇ TmP YP YbP ZnP₂ Zn₃P₂ ZrP ZrP₂
Other compounds	PBr₃ PBr₅ PBr₇ PCl₃ PCl₅ P₂Cl₄ PF₃ PF₅ PI₃ PH₃ PN P₃N₅ PO P₂O₃ P₂O₄ P₂O₅ P₄S₃ P₄S_x P₄S₁₀