Samarium(III) sulfide - Misplaced Pages

Samarium(III) sulfide
Names
Other names disamarium trisulphide; Samarium sesquisulfide
Identifiers
CAS Number	12067-22-0
3D model (JSmol)	Interactive image
ChemSpider	145783
ECHA InfoCard	100.031.875
EC Number	235-076-6
PubChem CID	166593
CompTox Dashboard (EPA)	DTXSID90923512
InChI InChI=1S/3S.2Sm/q3-2;2+3
SMILES ....
Properties
Chemical formula	Sm₂S₃
Molar mass	396.915 g/mol
Appearance	red-brown crystals
Density	5.87 g/cm, solid
Melting point	1,720 °C (3,130 °F; 1,990 K)
Band gap	1.71 eV
Magnetic susceptibility (χ)	+3300.0·10 cm/mol
Structure
Crystal structure	orthorhombic
Except where otherwise noted, data are given for materials in their standard state (at 25 °C , 100 kPa). N verify (what is ?) Infobox references

Chemical compound

Samarium(III) sulfide (Sm₂ S₃) is a chemical compound of the rare earth element samarium, and sulfur. In this compound samarium is in the +3 oxidation state, and sulfur is an anion in the −2 state.

Production

One way to make Samarium(III) sulfide is to heat samarium metal with sulfur. Another way to make a thin film is to alternatively soak in samarium(III) chloride tartaric acid complex, and sodium thiosulfate.

Properties

The low temperature α form crystallises in the orthorhombic crystal system. The unit cell has dimensions a=7.376, b=3.9622 c=15.352 Å with volume 448.7 Å₃. There are four of the formula in each unit cell (Sm₈S₁₂). The density comes out to 5.88 kg/liter. There are two kinds of samarium coordination in the solid, one is eight coordinated with sulfur surrounding in a bicapped trigonal pyramid. The other is a sevenfold capped distorted octahedral arrangement. This structure is similar to other light rare-earth element sulfides.

Samarium(III) sulfide is a semiconductor with a band gap of 1.7 eV. As a thin film on high area electrodes, it is under investigation as a super capacitor dielectric, with specific capacitances of up to 360 Farads per gram.

Related samarium sulfides include the monosulfide SmS and the mixed valent Sm₃S₄ which are also semiconductors. KSm₂CuS₆ is a layered quaternary sulfide.

References

Kumbhar, V.S.; Jagadale, A.D.; Lokhande, C.D. (July 2013). "Supercapacitive evaluation of soft chemically deposited α-Sm2S3 thin films". Journal of Power Sources. 234: 107–110. doi:10.1016/j.jpowsour.2013.01.078.
Aruga, Atsushi; Tsujimi, Sachiko; Nakai, Izumi (1996). "Crystal Structure of Samarium Sesquisulfide, α-Sm2S3". Analytical Sciences. 12 (1): 151–152. doi:10.2116/analsci.12.151.
Marin, Chris M.; Wang, Lu; Brewer, Joseph R.; Mei, Wai-Ning; Cheung, Chin Li (June 2013). "Crystalline α-Sm2S3 nanowires: Structure and optical properties of an unusual intrinsically degenerate semiconductor". Journal of Alloys and Compounds. 563: 293–299. doi:10.1016/j.jallcom.2013.02.082.
Ghogare, T.T.; Lokhande, V.C.; Ji, T.; Patil, U.M.; Lokhande, C.D. (June 2020). "A graphene oxide /samarium sulfide (GO/Sm2S3) composite thin film: Preparation and electrochemical study". Surfaces and Interfaces. 19: 100507. doi:10.1016/j.surfin.2020.100507. S2CID 216370577.
Wang, Lu; Marin, Chris; Mei, Wai-Ning; Cheung, Chin (31 May 2015). "Electronic structures of lanthanum, samarium, and gadolinium sulfides". AIMS Materials Science. 2 (2): 97–105. doi:10.3934/matersci.2015.2.97.
Pomelova, Tatiana A.; Podlipskaya, Tatiana Yu.; Kuratieva, Natalia V.; Cherkov, Alexander G.; Nebogatikova, Nadezhda A.; Ryzhikov, Maxim R.; Huguenot, Arthur; Gautier, Régis; Naumov, Nikolay G. (2018-11-05). "Synthesis, Crystal Structure, and Liquid Exfoliation of Layered Lanthanide Sulfides KLn 2 CuS 6 (Ln = La, Ce, Pr, Nd, Sm)". Inorganic Chemistry. 57 (21): 13594–13605. doi:10.1021/acs.inorgchem.8b02213. ISSN 0020-1669. PMID 30354089. S2CID 53026735.