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Hafnium disulfide

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(Redirected from Hafnium(IV) sulfide) "HfS2" redirects here. For the radio station, see HFS2.
Hafnium disulfide
Names
IUPAC name Hafnium disulfide
Identifiers
CAS Number
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.038.738 Edit this at Wikidata
PubChem CID
CompTox Dashboard (EPA)
InChI
  • InChI=1S/Hf.2S
SMILES
  • S==S
Properties
Chemical formula HfS2
Molar mass 246.62 g/mol
Appearance Brown solid
Density 6.03 g/cm
Band gap ~1.8 eV (indirect)
Structure
Crystal structure hP3, P3m1, No 164
Lattice constant a = 0.363 nm, c = 0.584 nm
Formula units (Z) 1
Related compounds
Other anions Hafnium dioxide
Other cations Tungsten disulfide
Molybdenum disulfide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C , 100 kPa). ☒verify (what is  ?) Infobox references
Chemical compound

Hafnium disulfide is an inorganic compound of hafnium and sulfur. It is a layered dichalcogenide with the chemical formula is HfS2. A few atomic layers of this material can be exfoliated using the standard Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor. High-yield synthesis of HfS2 has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS2 flakes. Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C.

References

  1. ^ Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, Florida: CRC Press. p. 4.66. ISBN 1-4398-5511-0.
  2. Terashima, K.; Imai, I. (1987). "Indirect absorption edge of ZrS2 and HfS2". Solid State Communications. 63 (4): 315. Bibcode:1987SSCom..63..315T. doi:10.1016/0038-1098(87)90916-1.
  3. Hodul, David T.; Stacy, Angelica M. (1984). "Anomalies in the properties of Hf(S2−xTex)1-y and Hf(Se2−xTex)1-y near the metal-insulator transition". Journal of Solid State Chemistry. 54 (3): 438. Bibcode:1984JSSCh..54..438H. doi:10.1016/0022-4596(84)90176-2.
  4. Kanazawa, Toru; Amemiya, Tomohiro; Ishikawa, Atsushi; Upadhyaya, Vikrant; Tsuruta, Kenji; Tanaka, Takuo; Miyamoto, Yasuyuki (2016). "Few-layer HfS2 transistors". Scientific Reports. 6: 22277. Bibcode:2016NatSR...622277K. doi:10.1038/srep22277. PMC 4772098. PMID 26926098.
  5. Kaur, Harneet (2017). "High Yield Synthesis and Chemical Exfoliation of Two-Dimensional Layered Hafnium Disulphide". Nano Research. arXiv:1611.00895. doi:10.1007/s12274-017-1636-x. S2CID 99414438.
  6. Kaminskii, B. T.; Prokof'eva, G. N.; Plygunov, A. S.; Galitskii, P. A. (1973-07-01). "Manufacture of zirconium and hafnium sulfide powders". Soviet Powder Metallurgy and Metal Ceramics. 12 (7): 521–524. doi:10.1007/BF00796747. S2CID 95277086.
Hafnium compounds
Hf(II)
Hf(III)
Hf(IV)
Sulfides (S)
H2S He
Li2S BeS B2S3
+BO3
CS2
COS
(NH4)SH O F Ne
Na2S MgS Al2S3 SiS
SiS2
-Si
PxSy
-P
-S
2
Cl Ar
K2S CaS ScS
Sc2S3
TiS
TiS2
Ti2S3
TiS3
VS
VS2
V2S3
CrS
Cr2S3
MnS
MnS2
FeS
Fe3S4
CoxSy NixSy Cu2S
CuS
ZnS GaS
Ga2S3
GeS
GeS2
-Ge
As2S3
As4S3
-As
SeS2
+Se
Br Kr
Rb2S SrS Y2S3 ZrS2 NbS2 MoS2
MoS3
TcS2
Tc2S7
Ru Rh2S3 PdS Ag2S CdS In2S3 SnS
SnS2
-Sn
Sb2S3
Sb2S5
-Sb
TeS2 I Xe
Cs2S BaS * LuS
Lu2S3
HfS2 TaS2 WS2
WS3
ReS2
Re2S7
OsS
4
Ir2S3
IrS2
PtS
PtS2
Au2S
Au2S3
HgS Tl2S PbS
PbS2
Bi2S3 PoS At Rn
Fr Ra ** Lr Rf Db Sg Bh Hs Mt Ds Rg Cn Nh Fl Mc Lv Ts Og
 
* LaS
La2S3
CeS
Ce2S3
PrS
Pr2S3
NdS
Nd2S3
PmS
Pm2S3
SmS
Sm2S3
EuS
Eu2S3
GdS
Gd2S3
TbS
Tb2S3
DyS
Dy2S3
HoS
Ho2S3
ErS
Er2S3
TmS
Tm2S3
YbS
Yb2S3
** Ac2S3 ThS2 Pa US
US2
Np Pu Am Cm Bk Cf Es Fm Md No
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